SLPS478B January   2014  – April 2024 CSD19501KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 Receiving Notification of Documentation Updates
    4. 5.4 Support Resources
    5. 5.5 Trademarks
    6. 5.6 Electrostatic Discharge Caution
    7. 5.7 Glossary
  7. 6Revision History
  8. 7Mechanical Data

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0V, ID = 250μA80V
IDSSDrain-to-Source Leakage CurrentVGS = 0V, VDS = 64V1μA
IGSSGate-to-Source Leakage CurrentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, ID = 250μA2.22.63.2V
RDS(on)Drain-to-Source On-ResistanceVGS = 6V, ID = 60A6.27.9mΩ
VGS = 10V, ID = 60A5.56.6mΩ
gfsTransconductanceVDS = 8V, ID = 60A137S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0V, VDS = 40V, ƒ = 1 MHz30603980pF
CossOutput Capacitance7841020pF
CrssReverse Transfer Capacitance12.416.1pF
RGSeries Gate Resistance1.32.6Ω
QgGate Charge Total (10V)VDS = 40V, ID = 60A3850nC
QgdGate Charge Gate-to-Drain5.8nC
QgsGate Charge Gate-to-Source12.4nC
Qg(th)Gate Charge at Vth7.5nC
QossOutput ChargeVDS = 40V, VGS = 0V98nC
td(on)Turn On Delay TimeVDS = 50V, VGS = 10V,
IDS = 60A, RG = 0Ω		21ns
trRise Time15ns
td(off)Turn Off Delay Time39ns
tfFall Time5ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = 60A, VGS = 0V0.91.1V
QrrReverse Recovery ChargeVDS= 40V, IF = 60A,
di/dt = 300A/μs		230nC
trrReverse Recovery Time74ns