SLPS479B December   2013  – April 2024 CSD19503KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 Receiving Notification of Documentation Updates
    4. 5.4 Support Resources
    5. 5.5 Trademarks
    6. 5.6 Electrostatic Discharge Caution
    7. 5.7 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.6 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.