SLPS480C January 2014 – April 2024 CSD19505KCS
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-Source Voltage | VGS = 0V, ID = 250μA | 80 | V | |||
| IDSS | Drain-to-Source Leakage Current | VGS = 0V, VDS = 64V | 1 | μA | |||
| IGSS | Gate-to-Source Leakage Current | VDS = 0V, VGS = 20V | 100 | nA | |||
| VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250μA | 2.2 | 2.6 | 3.2 | V | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = 6V, ID = 100A | 2.9 | 3.8 | mΩ | ||
| VGS = 10V, ID = 100A | 2.6 | 3.1 | mΩ | ||||
| gfs | Transconductance | VDS = 8V, ID = 100A | 262 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input Capacitance | VGS = 0V, VDS = 40V, ƒ = 1MHz | 6090 | 7820 | pF | ||
| Coss | Output Capacitance | 1600 | 2080 | pF | |||
| Crss | Reverse Transfer Capacitance | 26 | 34 | pF | |||
| RG | Series Gate Resistance | 1.4 | 2.8 | Ω | |||
| Qg | Gate Charge Total (10V) | VDS = 40V, ID = 100A | 76 | nC | |||
| Qgd | Gate Charge Gate to Drain | 11 | nC | ||||
| Qgs | Gate Charge Gate to Source | 25 | nC | ||||
| Qg(th) | Gate Charge at Vth | 15 | nC | ||||
| Qoss | Output Charge | VDS = 40V, VGS = 0V | 214 | nC | |||
| td(on) | Turn On Delay Time | VDS =
50V, VGS = 10V, IDS = 100A, RG = 0Ω | 31 | ns | |||
| tr | Rise Time | 16 | ns | ||||
| td(off) | Turn Off Delay Time | 62 | ns | ||||
| tf | Fall Time | 6 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode Forward Voltage | ISD = 100A, VGS = 0V | 0.9 | 1.1 | V | ||
| Qrr | Reverse Recovery Charge | VDS=
40V, IF = 100A, di/dt = 300A/μs | 400 | nC | |||
| trr | Reverse Recovery Time | 88 | ns | ||||