SLPS407D September 2013 – May 2024 CSD19531KCS
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
This 100V, 6.4mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 100 | V | |
Qg | Gate Charge Total (10V) | 37 | nC | |
Qgd | Gate Charge Gate-to-Drain | 7.5 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 6V | 7.3 | mΩ |
VGS = 10V | 6.4 | |||
VGS(th) | Threshold Voltage | 2.7 | V |
DEVICE | PACKAGE | MEDIA | QTY | SHIP |
---|---|---|---|---|
CSD19531KCS | TO-220 Plastic Package | Tube | 50 | Tube |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 100 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package Limited) | 100 | A |
Continuous Drain Current (Silicon Limited), TC = 25°C | 110 | ||
Continuous Drain Current (Silicon Limited), TC = 100°C | 78 | ||
IDM | Pulsed Drain Current(1) | 285 | A |
PD | Power Dissipation | 214 | W |
TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 175 | °C |
EAS | Avalanche Energy, Single Pulse ID = 60A, L = 0.1mH, RG = 25Ω |
180 | mJ |
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