SLPS553 October   2015 CSD19532KTT

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KTT Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening (0.125 mm Stencil Thickness)

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KTT|2
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • D2PAK Plastic Package

2 Applications

  • Secondary Side Synchronous Rectifier
  • Hot Swap
  • Motor Control

3 Description

This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

SPACE

Pin Out
CSD19532KTT FET_Pins.gif

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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10 V) 44 nC
Qgd Gate Charge Gate to Drain 5.6 nC
RDS(on) Drain-to-Source On Resistance VGS = 6 V 5.3 mΩ
VGS = 10 V 4.6 mΩ
VGS(th) Threshold Voltage 2.6 V

Ordering Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD19532KTT 500 13-Inch Reel D2PAK Plastic Package Tape & Reel
CSD19532KTTT 50
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 200 A
Continuous Drain Current (Silicon limited), TC = 25°C 136
Continuous Drain Current (Silicon limited), TC = 100°C 98
IDM Pulsed Drain Current (1) 400 A
PD Power Dissipation 250 W
TJ, Tstg Operating Junction and
Storage Temperature Range		 –55 to 175 °C
EAS Avalanche Energy, single pulse
ID = 72 A, L = 0.1 mH, RG = 25 Ω		 259 mJ
  1. Max RθJC = 0.6°C/W, Pulse duration ≤ 100 µs,
    Duty cycle ≤ 1%

Text added for spacing

RDS(on) vs VGS

CSD19532KTT D007_SLPS553.gif

Gate Charge

CSD19532KTT D004_SLPS553_FP.gif