SLPS530 Data sheet

SLPS530A January 2015 – December 2024 CSD19534KCS

PRODUCTION DATA

4.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0V, I_D = 250μA	100			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0V, V_DS = 80V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0V, V_GS = 20V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250μA	2.4	2.8	3.4	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 6V, I_D = 30A		16.3	20.0	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10V, I_D = 30A		13.7	16.5	mΩ
g_fs	Transconductance	V_DS = 10V, I_D = 30A		80		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0V, V_DS = 50V, ƒ = 1MHz		1290	1670	pF
C_oss	Output Capacitance			257	334	pF
C_rss	Reverse Transfer Capacitance			5.7	7.4	pF
R_G	Series Gate Resistance			1.1	2.2	Ω
Q_g	Gate Charge Total (10V)	V_DS = 50V, I_D = 30A		17.1	22.2	nC
Q_gd	Gate Charge Gate-to-Drain			3.2		nC
Q_gs	Gate Charge Gate-to-Source			5.1		nC
Q_g(th)	Gate Charge at V_th			3.3		nC
Q_oss	Output Charge	V_DS = 50V, V_GS = 0V		44		nC
t_d(on)	Turn On Delay Time	V_DS = 50V, V_GS = 10V, I_DS = 30A, R_G = 0Ω		6		ns
t_r	Rise Time			2		ns
t_d(off)	Turn Off Delay Time			9		ns
t_f	Fall Time			1		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 30A, V_GS = 0V		0.9	1.1	V
Q_rr	Reverse Recovery Charge	V_DS= 50V, I_F = 30A, di/dt = 300A/μs		195		nC
t_rr	Reverse Recovery Time	V_DS= 50V, I_F = 30A, di/dt = 300A/μs		72		ns