SLPS485C January   2014  – May 2024 CSD19536KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

CSD19536KCS Transient Thermal Impedance
Figure 4-1 Transient Thermal Impedance
CSD19536KCS Saturation Characteristics
Figure 4-2 Saturation Characteristics
CSD19536KCS Transfer Characteristics
Figure 4-3 Transfer Characteristics
CSD19536KCS Gate Charge
Figure 4-4 Gate Charge
CSD19536KCS Threshold Voltage vs Temperature
Figure 4-6 Threshold Voltage vs Temperature
CSD19536KCS Normalized On-State Resistance vs Temperature
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD19536KCS Maximum Safe Operating Area
Figure 4-10 Maximum Safe Operating Area
CSD19536KCS Maximum Drain Current vs Temperature
Figure 4-12 Maximum Drain Current vs Temperature
CSD19536KCS Capacitance
Figure 4-5 Capacitance
CSD19536KCS On-State Resistance vs Gate-to-Source Voltage
Figure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD19536KCS Typical Diode Forward Voltage
Figure 4-9 Typical Diode Forward Voltage
CSD19536KCS Single Pulse Unclamped Inductive Switching
Figure 4-11 Single Pulse Unclamped Inductive Switching