SLPS485C January   2014  – May 2024 CSD19536KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0V, ID = 250μA100V
IDSSDrain-to-Source Leakage CurrentVGS = 0V, VDS = 80V1μA
IGSSGate-to-Source Leakage CurrentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, ID = 250μA2.12.53.2V
RDS(on)Drain-to-Source On-ResistanceVGS = 6V, ID = 100A2.53.2mΩ
VGS = 10V, ID = 100A2.32.7mΩ
gfsTransconductanceVDS = 10V, ID = 100A307S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0V, VDS = 50V, ƒ = 1MHz925012000pF
CossOutput Capacitance18202370pF
CrssReverse Transfer Capacitance4761pF
RGSeries Gate Resistance1.42.8Ω
QgGate Charge Total (10V)VDS = 50V, ID = 100A118153nC
QgdGate Charge Gate to Drain17nC
QgsGate Charge Gate to Source37nC
Qg(th)Gate Charge at Vth24nC
QossOutput ChargeVDS = 50V, VGS = 0V335nC
td(on)Turn On Delay TimeVDS = 50V, VGS = 10V,
IDS = 100A, RG = 0Ω		14ns
trRise Time8ns
td(off)Turn Off Delay Time38ns
tfFall Time5ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = 100A, VGS = 0V0.91.1V
QrrReverse Recovery ChargeVDS= 50V, IF = 100A,
di/dt = 300A/μs		548nC
trrReverse Recovery Time110ns