SLPS540B March   2015  – August 2016 CSD19536KTT

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KTT Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KTT|2
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 100 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 80 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 2.1 2.5 3.2 V
RDS(on) Drain-to-source on-resistance VGS = 6 V, ID = 100 A 2.2 2.8 mΩ
VGS = 10 V, ID = 100 A 2 2.4
gfs Transconductance VDS = 10 V, ID = 100 A 329 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 50 V, ƒ = 1 MHz 9250 12000 pF
Coss Output capacitance 1820 2370 pF
Crss Reverse transfer capacitance 47 61 pF
RG Series gate resistance 1.4 2.8 Ω
Qg Gate charge total (10 V) VDS = 50 V, ID = 100 A 118 153 nC
Qgd Gate charge gate-to-drain 17 nC
Qgs Gate charge gate-to-source 37 nC
Qg(th) Gate charge at Vth 24 nC
Qoss Output charge VDS = 50 V, VGS = 0 V 335 nC
td(on) Turnon delay time VDS = 50 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω		 13 ns
tr Rise time 8 ns
td(off) Turnoff delay time 32 ns
tf Fall time 6 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 100 A, VGS = 0 V 0.9 1.1 V
Qrr Reverse recovery charge VDS= 50 V, IF = 100 A,
di/dt = 300 A/μs		 548 nC
trr Reverse recovery time 103 ns

5.2 Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-case thermal resistance 0.4 °C/W
RθJA Junction-to-ambient thermal resistance 62 °C/W

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD19536KTT D001_SLPS540_r2.png
Figure 1. Transient Thermal Impedance
CSD19536KTT D002_SLPS540_r2.gif
Figure 2. Saturation Characteristics
CSD19536KTT D003_SLPS540.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD19536KTT D004_SLPS540.gif
VDS = 50 V ID = 100 A
Figure 4. Gate Charge
CSD19536KTT D006_SLPS540.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD19536KTT D008_SLPS540.gif
ID = 100 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD19536KTT D010_SLPS540_r3.gif
Single pulse, max RθJC = 0.4°C/W
Figure 10. Maximum Safe Operating Area
CSD19536KTT D012_SLPS540_r2.gif
Figure 12. Maximum Drain Current vs Temperature
CSD19536KTT D005_SLPS540.gif
Figure 5. Capacitance
CSD19536KTT D007_SLPS540.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD19536KTT D009_SLPS540.gif
Figure 9. Typical Diode Forward Voltage
CSD19536KTT D011_SLPS540.gif
Figure 11. Single Pulse Unclamped Inductive Switching