Abstract

This 100V, 49mΩ, SON 2mm × 2mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Figure 3-1 Top View

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	100		V
Q_g	Gate Charge Total (10V)	4.3		nC
Q_gd	Gate Charge Gate-to-Drain	0.8		nC
R_DS(on)	Drain-to-Source On Resistance	V_GS = 6V	58	mΩ
R_DS(on)	Drain-to-Source On Resistance	V_GS = 10V	49	mΩ
V_GS(th)	Threshold Voltage	3.2		V

Device Information⁽¹⁾

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD19538Q2	3000	7 Inch Reel	SON 2.00mm x 2.00mm Plastic Package	Tape and Reel
CSD19538Q2T	250	7 Inch Reel
CSD19538Q2R	10,000	13 Inch Reel

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	100	V
V_GS	Gate-to-Source Voltage	±20	V
I_D	Continuous Drain Current (Package Limited)	14.4	A
	Continuous Drain Current (Silicon Limited), T_C = 25°C	13.1
	Continuous Drain Current⁽¹⁾	4.6
I_DM	Pulsed Drain Current⁽²⁾	34.4	A
P_D	Power Dissipation⁽¹⁾	2.5	W
P_D	Power Dissipation, T_C = 25°C	20.2	W
T_J, T_stg	Operating Junction Temperature, Storage Temperature	–55 to 150	°C
E_AS	Avalanche Energy, Single Pulse I_D = 12.6A, L = 0.1mH, R_G = 25Ω	8	mJ

(1) Typical R_θJA = 50°C/W on a 1 inch², 2oz Cu pad on a 0.06 inch thick FR4 PCB.

(2) Max R_θJC = 6.2°C/W, pulse duration ≤ 100μs, duty cycle ≤ 1%.

R_DS(on) vs V_GS

Gate Charge