SLPS583A May   2016  – March 2017 CSD19538Q3A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3A Package Dimensions
    2. 7.2 Q3A Recommended PCB Pattern
    3. 7.3 Q3A Recommended Stencil Pattern
    4. 7.4 Q3A Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package

2 Applications

  • Power Over Ethernet (PoE)
  • Power Sourcing Equipment (PSE)
  • Motor Control

3 Description

This 100-V, 49-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.

Top View
CSD19538Q3A P0093-01_LPS198.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10 V) 4.3 nC
Qgd Gate Charge Gate to Drain 0.8 nC
RDS(on) Drain-to-Source On Resistance VGS = 6 V 58 mΩ
VGS = 10 V 49
VGS(th) Threshold Voltage 3.2 V

Device Information(1)

DEVICE MEDIA QTY PACKAGE SHIP
CSD19538Q3A 13-Inch Reel 3000 SON
3.30-mm × 3.30-mm
Plastic Package		 Tape and Reel
CSD19538Q3AT 7-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 15 A
Continuous Drain Current (Silicon Limited), TC = 25°C 14
Continuous Drain Current(1) 4.9
IDM Pulsed Drain Current(2) 37 A
PD Power Dissipation(1) 2.8 W
Power Dissipation, TC = 25°C 23
TJ,
Tstg 		Operating Junction Temperature,
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, Single Pulse
ID = 12.7 A, L = 0.1 mH, RG = 25 Ω		 8.1 mJ
  1. Typical RθJA = 45°C/W on a 1-in2, 2-oz Cu pad on a 0.06 in thick FR4 PCB.
  2. Max RθJC = 5.5°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD19538Q3A D007_SLPS583.gif

Gate Charge

CSD19538Q3A D004_SLPS583_FP_r2.gif