SLPS583A May 2016 – March 2017 CSD19538Q3A
PRODUCTION DATA.
This 100-V, 49-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 100 | V | |
Qg | Gate Charge Total (10 V) | 4.3 | nC | |
Qgd | Gate Charge Gate to Drain | 0.8 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 6 V | 58 | mΩ |
VGS = 10 V | 49 | |||
VGS(th) | Threshold Voltage | 3.2 | V |
DEVICE | MEDIA | QTY | PACKAGE | SHIP |
---|---|---|---|---|
CSD19538Q3A | 13-Inch Reel | 3000 | SON 3.30-mm × 3.30-mm Plastic Package |
Tape and Reel |
CSD19538Q3AT | 7-Inch Reel | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 100 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package Limited) | 15 | A |
Continuous Drain Current (Silicon Limited), TC = 25°C | 14 | ||
Continuous Drain Current(1) | 4.9 | ||
IDM | Pulsed Drain Current(2) | 37 | A |
PD | Power Dissipation(1) | 2.8 | W |
Power Dissipation, TC = 25°C | 23 | ||
TJ, Tstg |
Operating Junction Temperature, Storage Temperature |
–55 to 150 | °C |
EAS | Avalanche Energy, Single Pulse ID = 12.7 A, L = 0.1 mH, RG = 25 Ω |
8.1 | mJ |