3 Description

This –8-V, 8.2-mΩ, 1.2-mm × 1.2-mm Land Grid Array (LGA) NexFET™ device has been designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The Land Grid Array (LGA) package is a silicon chip scale package with metal pads instead of solder balls.

R_DS(on) vs V_GS

Product Summary

T_A = 25°C		VALUE		UNIT
V_DS	Drain-to-Source Voltage	–8		V
Q_g	Gate Charge Total (–4.5 V)	6.5		nC
Q_gd	Gate Charge Gate-to-Drain	1.0		nC
R_DS(on)	Drain-to-Source On-Resistance	V_GS = –1.5 V	30	mΩ
		V_GS = –1.8 V	20
		V_GS = –2.5 V	11.5
		V_GS = –4.5 V	8.2
V_GS(th)	Threshold Voltage	–0.7		V

Device Information⁽¹⁾

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD22205L	3000	7-Inch Reel	1.20-mm × 1.20-mm Land Grid Array Package	Tape and Reel
CSD22205LT	250	7-Inch Reel	1.20-mm × 1.20-mm Land Grid Array Package	Tape and Reel

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	–8	V
V_GS	Gate-to-Source Voltage	–6	V
I_D	Continuous Drain Current⁽¹⁾	–7.4	A
I_DM	Pulsed Drain Current⁽²⁾	–71	A
P_D	Power Dissipation⁽¹⁾	0.6	W
T_J, T_stg	Operating Junction Temperature, Storage Temperature	–55 to 150	°C

(1) Min Cu R_θJA = 225°C/W.

(2) Pulse width ≤ 100 μs, duty cycle ≤ 1%.

Figure 3-1 Top View and Circuit Configuration