Refer to the PDF data sheet for device specific package drawings
This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small
1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | –12 | V | |
Qg | Gate Charge Total (–4.5 V) | 2.9 | nC | |
Qgd | Gate Charge Gate-to-Drain | 0.28 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = –1.5 V | 82 | mΩ |
VGS = –1.8 V | 67 | mΩ | ||
VGS = –2.5 V | 54 | mΩ | ||
VGS = –4.5 V | 44 | mΩ | ||
VGS(th) | Threshold Voltage | –0.60 | V |
Device | Qty | Media | Package | Ship |
---|---|---|---|---|
CSD23202W10 | 3000 | 7-Inch Reel | 1 × 1-mm Wafer Level Package | Tape and Reel |
CSD23202W10T | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | –12 | V |
VGS | Gate-to-Source Voltage | –6 | V |
ID | Continuous Drain Current(1) | –2.2 | A |
IDM | Pulsed Drain Current(2) | –25 | A |
IG | Continuous Gate Clamp Current | –0.5 | A |
Pulsed Gate Clamp Current | –7 | A | |
PD | Power Dissipation(1) | 1 | W |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
RDS(on) vs VGS![]() |
Gate Charge![]() |
DATE | REVISION | NOTES |
---|---|---|
August 2014 | * | Initial release. |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0 V, ID = –250 μA | –12 | V | |||
BVGSS | Gate-to-Source Voltage; | VDS = 0 V, IG = –250 μA | –6 | –7.2 | V | ||
IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = –9.6 V | –1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = –6 V | –100 | nA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = –250 μA | –0.4 | –0.6 | –0.9 | V | |
RDS(on) | Drain-to-Source On-Resistance | VGS = –1.5 V, ID = –0.5 A | 82 | 123 | mΩ | ||
VGS = –1.8 V, ID = –0.5 A | 67 | 92 | mΩ | ||||
VGS = –2.5 V, ID = –0.5 A | 54 | 66 | mΩ | ||||
VGS = –4.5 V, ID = –0.5 A | 44 | 53 | mΩ | ||||
gƒs | Transconductance | VDS = –1.2 V, ID = –0.5 A | 5.6 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
CISS | Input Capacitance | VGS = 0 V, VDS = –6.0 V, ƒ = 1 MHz | 394 | 512 | pF | ||
COSS | Output Capacitance | 238 | 310 | pF | |||
CRSS | Reverse Transfer Capacitance | 29 | 37 | pF | |||
Qg | Gate Charge Total (–4.5 V) | VDS = –6 V, ID = –0.5 A | 2.9 | 3.8 | nC | ||
Qgd | Gate Charge Gate-to-Drain | 0.28 | nC | ||||
Qgs | Gate Charge Gate-to-Source | 0.55 | nC | ||||
Qg(th) | Gate Charge at Vth | 0.29 | nC | ||||
QOSS | Output Charge | VDS = –6 V, VGS = 0 V | 2.0 | nC | |||
td(on) | Turn On Delay Time | VDS = –6 V, VGS = –4.5 V, ID = –0.5 A RG = 0 Ω |
9 | ns | |||
tr | Rise Time | 4 | ns | ||||
td(off) | Turn Off Delay Time | 58 | ns | ||||
tƒ | Fall Time | 21 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | IS = –0.5 A, VGS = 0 V | –0.66 | –1 | V | ||
Qrr | Reverse Recovery Charge | VDS= –6 V, IF = –0.5 A, di/dt = 100 A/μs | 3.7 | nC | |||
trr | Reverse Recovery Time | 12 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJA | Junction-to-Ambient Thermal Resistance(1) | 195 | °C/W | ||
Junction-to-Ambient Thermal Resistance(2) | 65 |
![]() |
Typical RθJA = 65°C/W when mounted on 1 inch2 of 2 oz. Cu. |
![]() |
Typical RθJA = 195°C/W when mounted on minimum pad area of 2 oz. Cu. |
ID = –0.5 A | VDS = –6 V | |
ID = –250 µA | ||
ID = –0.5 A | ||
Single Pulse, Max RθJA = 195°C/W | ||
VDS = –5 V | ||
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.