Refer to the PDF data sheet for device specific package drawings
This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small
1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | –12 | V | |
Qg | Gate Charge Total (–4.5 V) | 2.9 | nC | |
Qgd | Gate Charge Gate-to-Drain | 0.28 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = –1.5 V | 82 | mΩ |
VGS = –1.8 V | 67 | mΩ | ||
VGS = –2.5 V | 54 | mΩ | ||
VGS = –4.5 V | 44 | mΩ | ||
VGS(th) | Threshold Voltage | –0.60 | V |
Device | Qty | Media | Package | Ship |
---|---|---|---|---|
CSD23202W10 | 3000 | 7-Inch Reel | 1 × 1-mm Wafer Level Package | Tape and Reel |
CSD23202W10T | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | –12 | V |
VGS | Gate-to-Source Voltage | –6 | V |
ID | Continuous Drain Current(1) | –2.2 | A |
IDM | Pulsed Drain Current(2) | –25 | A |
IG | Continuous Gate Clamp Current | –0.5 | A |
Pulsed Gate Clamp Current | –7 | A | |
PD | Power Dissipation(1) | 1 | W |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
RDS(on) vs VGS![]() |
Gate Charge![]() |
DATE | REVISION | NOTES |
---|---|---|
August 2014 | * | Initial release. |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0 V, ID = –250 μA | –12 | V | |||
BVGSS | Gate-to-Source Voltage; | VDS = 0 V, IG = –250 μA | –6 | –7.2 | V | ||
IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = –9.6 V | –1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = –6 V | –100 | nA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = –250 μA | –0.4 | –0.6 | –0.9 | V | |
RDS(on) | Drain-to-Source On-Resistance | VGS = –1.5 V, ID = –0.5 A | 82 | 123 | mΩ | ||
VGS = –1.8 V, ID = –0.5 A | 67 | 92 | mΩ | ||||
VGS = –2.5 V, ID = –0.5 A | 54 | 66 | mΩ | ||||
VGS = –4.5 V, ID = –0.5 A | 44 | 53 | mΩ | ||||
gƒs | Transconductance | VDS = –1.2 V, ID = –0.5 A | 5.6 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
CISS | Input Capacitance | VGS = 0 V, VDS = –6.0 V, ƒ = 1 MHz | 394 | 512 | pF | ||
COSS | Output Capacitance | 238 | 310 | pF | |||
CRSS | Reverse Transfer Capacitance | 29 | 37 | pF | |||
Qg | Gate Charge Total (–4.5 V) | VDS = –6 V, ID = –0.5 A | 2.9 | 3.8 | nC | ||
Qgd | Gate Charge Gate-to-Drain | 0.28 | nC | ||||
Qgs | Gate Charge Gate-to-Source | 0.55 | nC | ||||
Qg(th) | Gate Charge at Vth | 0.29 | nC | ||||
QOSS | Output Charge | VDS = –6 V, VGS = 0 V | 2.0 | nC | |||
td(on) | Turn On Delay Time | VDS = –6 V, VGS = –4.5 V, ID = –0.5 A RG = 0 Ω |
9 | ns | |||
tr | Rise Time | 4 | ns | ||||
td(off) | Turn Off Delay Time | 58 | ns | ||||
tƒ | Fall Time | 21 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | IS = –0.5 A, VGS = 0 V | –0.66 | –1 | V | ||
Qrr | Reverse Recovery Charge | VDS= –6 V, IF = –0.5 A, di/dt = 100 A/μs | 3.7 | nC | |||
trr | Reverse Recovery Time | 12 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJA | Junction-to-Ambient Thermal Resistance(1) | 195 | °C/W | ||
Junction-to-Ambient Thermal Resistance(2) | 65 |
![]() |
Typical RθJA = 65°C/W when mounted on 1 inch2 of 2 oz. Cu. |
![]() |
Typical RθJA = 195°C/W when mounted on minimum pad area of 2 oz. Cu. |
ID = –0.5 A | VDS = –6 V | |
ID = –250 µA | ||
ID = –0.5 A | ||
Single Pulse, Max RθJA = 195°C/W | ||
VDS = –5 V | ||
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
POSITION | DESIGNATION |
---|---|
B1 | Source |
A1 | Gate |
A2, B2 | Drain |