3 Description
This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small
1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.
Product Summary
TA = 25°C |
TYPICAL VALUE |
UNIT |
VDS |
Drain-to-Source Voltage |
–12 |
V |
Qg |
Gate Charge Total (–4.5 V) |
2.9 |
nC |
Qgd |
Gate Charge Gate-to-Drain |
0.28 |
nC |
RDS(on) |
Drain-to-Source On-Resistance |
VGS = –1.5 V |
82 |
mΩ |
VGS = –1.8 V |
67 |
mΩ |
VGS = –2.5 V |
54 |
mΩ |
VGS = –4.5 V |
44 |
mΩ |
VGS(th) |
Threshold Voltage |
–0.60 |
V |
Ordering Information(1)
Device |
Qty |
Media |
Package |
Ship |
CSD23202W10 |
3000 |
7-Inch Reel |
1 × 1-mm Wafer Level Package |
Tape and Reel |
CSD23202W10T |
250 |
7-Inch Reel |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C |
VALUE |
UNIT |
VDS |
Drain-to-Source Voltage |
–12 |
V |
VGS |
Gate-to-Source Voltage |
–6 |
V |
ID |
Continuous Drain Current(1) |
–2.2 |
A |
IDM |
Pulsed Drain Current(2) |
–25 |
A |
IG |
Continuous Gate Clamp Current |
–0.5 |
A |
Pulsed Gate Clamp Current |
–7 |
A |
PD |
Power Dissipation(1) |
1 |
W |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 |
°C |
- Device operating at a temperature of 105°C
- Typ RθJA = 195°C/W, Pulse width ≤100 μs, duty cycle ≤1%