SLPS453E May   2014  – January 2022 CSD23382F4

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD23382F4 Embossed Carrier Tape Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJC|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

GUID-0CDF9A52-F9CA-4A27-8D23-0998C6D74173-low.pngFigure 5-1 Transient Thermal Impedance
GUID-845DCC88-B928-4891-A299-CA975A0E446E-low.pngFigure 5-2 Saturation Characteristics
GUID-02C479BA-4A1F-4892-A1B2-517CC0DC8D6B-low.png
VDS = –5 V
Figure 5-3 Transfer Characteristics
GUID-04DC423B-E243-43AF-91E2-E2985A72F0E0-low.png
ID = –0.5 AVDS = 6 V
Figure 5-4 Gate Charge
GUID-D0656342-4BEF-41C3-9D09-75E4DE4ECCBC-low.png
ID = –250 µA
Figure 5-6 Threshold Voltage vs Temperature
GUID-10082FC7-4062-45F2-BDEF-90BF11BABA5C-low.png
VGS = –4.5 VID = –0.5 A
Figure 5-8 Normalized On-State Resistance vs Temperature
GUID-B34B31D4-3BC2-411D-A315-06C9482C109E-low.png
Single PulseTyp RθJA = 245°C/W
Figure 5-10 Maximum Safe Operating Area
GUID-34A41839-FD55-4CC2-871F-494D49AD7A25-low.pngFigure 5-5 Capacitance
GUID-BC0EA653-E75E-4D58-84D5-E4269009F714-low.pngFigure 5-7 On-State Resistance vs Gate-to-Source Voltage
GUID-7FC5C05D-6717-45D2-A282-99D67EE76A5E-low.pngFigure 5-9 Typical Diode Forward Voltage
GUID-886B45B3-C43D-4A05-A6FF-22630D58F87F-low.pngFigure 5-11 Maximum Drain Current vs Temperature