CSD25202W15 20-V P-Channel NexFET Power MOSFET

1 Features

Low-Resistance
Small Footprint 1.5 mm × 1.5 mm
Gate ESD Protection –3 kV
Pb Free
RoHS Compliant
Halogen Free
Gate-Source Voltage Clamp

2 Applications

Battery Management
Battery Protection

3 Description

This 21 mΩ, 20 V device is designed to deliver the lowest on resistance and gate charge in a small 1.5 mm × 1.5 mm chip scale package with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	–20		V
Q_g	Gate Charge Total (–4.5 V)	5.8		nC
Q_gd	Gate Charge Gate-to-Drain	0.8		nC
R_DS(on)	Drain-to-Source On Resistance	V_GS= –1.8 V	40	mΩ
		V_GS = –2.5 V	26	mΩ
		V_GS = –4.5 V	21	mΩ
V_GS(th)	Threshold Voltage	–0.75		V

Ordering Information⁽¹⁾

Device	Qty	Media	Package	Ship
CSD25202W15	3000	7-Inch Reel	1.5-mm × 1.5-mm Wafer Level Package	Tape and Reel
CSD25202W15T	250	7-Inch Reel	1.5-mm × 1.5-mm Wafer Level Package	Tape and Reel

For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	–20	V
V_GS	Gate-to-Source Voltage	–6	V
I_D	Continuous Drain Current⁽¹⁾	–4	A
I_D	Pulsed Drain Current⁽²⁾	–38	A
I_G	Continuous Gate Current⁽¹⁾	–0.5	A
I_G	Pulsed Gate Current⁽²⁾	–7	A
P_D	Power Dissipation	0.5	W
T_J, T_stg	Operating Junction and Storage Temperature Range	–55 to 150	°C

Ball limited
Typical R_θJA = 220ºC/W, pulse duration ≤100 µs, duty cycle ≤ 1%

R_DS(on) vs V_GS

Gate Charge

4 Revision History

Changes from * Revision (June 2014) to A Revision

Corrected "Drain-to-Drain Voltage" to state "Drain-to-Source Voltage"Go

5 Specifications

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_DS = –250 μA	–20			V
BV_GSS	Gate-to-Source Voltage	V_DS = 0 V, I_G = –250 μA	–6		–7.2	V
I_DDS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = –16 V			–1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = –6 V			–100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_DS = –250 μA	–0.45	–0.75	–1.05	V
R_DS(on)	Drain-to-Source On Resistance	V_GS = –1.8 V, I_DS = –2 A		40	52	mΩ
		V_GS = –2.5 V, I_DS = –2 A		26	32	mΩ
		V_GS = –4.5 V, I_DS = –2 A		21	26	mΩ
g_ƒs	Transconductance	V_DS = –2 V, I_DS = –2 A		16		S
DYNAMIC CHARACTERISTICS
C_ISS	Input Capacitance	V_GS = 0 V, V_DS = –10 V, ƒ = 1 MHz		778	1010	pF
C_OSS	Output Capacitance			400	520	pF
C_RSS	Reverse Transfer Capacitance			21	27	pF
R_G	Series Gate Resistance⁽¹⁾			31		Ω
Q_g	Gate Charge Total (–4.5 V)	V_DS = –10 V, I_D = –2 A		5.8	7.5	nC
Q_gd	Gate Charge - Gate-to-Drain			0.8		nC
Q_gs	Gate Charge - Gate-to-Source			1.1		nC
Q_g(th)	Gate Charge at V_th			0.6		nC
Q_OSS	Output Charge	V_DS = –9.5 V, V_GS = 0 V		8.7		nC
t_d(on)	Turn On Delay Time⁽²⁾	V_DS = –10 V, V_GS = –4.5 V, I_DS = –2 A, R_G = 2 Ω		15		ns
t_r	Rise Time⁽²⁾			12		ns
t_d(off)	Turn Off Delay Time⁽²⁾			64		ns
t_f	Fall Time⁽²⁾			28		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_DS = –2 A, V_GS = 0 V		–0.75	–1	V
Q_rr	Reverse Recovery Charge	V_SD= –10 V, I_F = –2 A, di/dt = 200 A/μs		19		nC
t_rr	Reverse Recovery Time	V_SD= –10 V, I_F = –2 A, di/dt = 200 A/μs		26		ns