SLPS508A June   2014  – July 2014 CSD25202W15

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD25202W15 Package Dimensions
    2. 7.2 Recommended Land Pattern
    3. 7.3 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZF|9
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Low-Resistance
  • Small Footprint 1.5 mm × 1.5 mm
  • Gate ESD Protection –3 kV
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • Gate-Source Voltage Clamp

2 Applications

  • Battery Management
  • Battery Protection

3 Description

This 21 mΩ, 20 V device is designed to deliver the lowest on resistance and gate charge in a small 1.5 mm × 1.5 mm chip scale package with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage –20 V
Qg Gate Charge Total (–4.5 V) 5.8 nC
Qgd Gate Charge Gate-to-Drain 0.8 nC
RDS(on) Drain-to-Source On Resistance VGS = –1.8 V 40 mΩ
VGS = –2.5 V 26 mΩ
VGS = –4.5 V 21 mΩ
VGS(th) Threshold Voltage –0.75 V

Ordering Information(1)

Device Qty Media Package Ship
CSD25202W15 3000 7-Inch Reel 1.5-mm × 1.5-mm Wafer Level Package Tape and Reel
CSD25202W15T 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.


Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage –20 V
VGS Gate-to-Source Voltage –6 V
ID Continuous Drain Current(1) –4 A
Pulsed Drain Current(2) –38 A
IG Continuous Gate Current(1) –0.5 A
Pulsed Gate Current(2) –7 A
PD Power Dissipation 0.5 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
  1. Ball limited
  2. Typical RθJA = 220ºC/W, pulse duration ≤100 µs, duty cycle ≤ 1%

RDS(on) vs VGS

graph07_SLPS508.png

Gate Charge

graph04_FrontPage2_SLPS508.png