Refer to the PDF data sheet for device specific package drawings
This 19.9 mΩ, –20 V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2 mm × 2 mm plastic package make the device ideal for battery operated space constrained operations.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | –20 | V | |
Qg | Gate Charge Total (–4.5 V) | 3.6 | nC | |
Qgd | Gate Charge Gate to Drain | 0.5 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = –1.8 V | 59.0 | mΩ |
VGS = –2.5 V | 27.0 | mΩ | ||
VGS = –4.5 V | 19.9 | mΩ | ||
VGS(th) | Threshold Voltage | -0.85 | V |
Device | Media | Qty | Package | Ship |
---|---|---|---|---|
CSD25310Q2 | 7-Inch Reel | 3000 | SON 2 x 2 mm Plastic Package |
Tape and Reel |
CSD25310Q2T | 7-Inch Reel | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | –20 | V |
VGS | Gate-to-Source Voltage | ±8 | V |
ID | Continuous Drain Current (Package Limit) | –20 | A |
Continuous Drain Current(1) | –9.6 | A | |
IDM | Pulsed Drain Current(2) | 48 | A |
PD | Power Dissipation(1) | 2.9 | W |
TJ, Tstg | Operating Junction and Storage Temperature Range | –55 to 150 | °C |
RDS(on) vs VGS |
Gate Charge |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0 V, ID = –250 μA | –20 | V | |||
IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = –16 V | –1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = –8 V | –100 | nA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, IDS = –250 μA | –0.55 | –0.85 | –1.10 | V | |
RDS(on) | Drain-to-Source On Resistance | VGS = –1.8 V, IDS = –5 A | 59.0 | 89.0 | mΩ | ||
VGS = –2.5 V, IDS = –5 A | 27.0 | 32.5 | mΩ | ||||
VGS = –4.5 V, IDS = –5 A | 19.9 | 23.9 | mΩ | ||||
gfs | Transconductance | VDS = –16 V, IDS = –5 A | 34 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
CISS | Input Capacitance | VGS = 0 V, VDS = –10 V, f = 1 MHz | 504 | 655 | pF | ||
COSS | Output Capacitance | 281 | 365 | pF | |||
CRSS | Reverse Transfer Capacitance | 16.7 | 21.7 | pF | |||
Rg | Series Gate Resistance | 1.9 | Ω | ||||
Qg | Gate Charge Total (–4.5 V) | VDS = –10 V, IDS = –5 A | 3.6 | 4.7 | nC | ||
Qgd | Gate Charge Gate to Drain | 0.5 | nC | ||||
Qgs | Gate Charge Gate to Source | 1.1 | nC | ||||
Qg(th) | Gate Charge at Vth | 0.6 | nC | ||||
QOSS | Output Charge | VDS = –10 V, VGS = 0 V | 5.0 | nC | |||
td(on) | Turn On Delay Time | VDS = –10 V, VGS = –4.5 V, IDS = –5 A RG = 2 Ω |
8 | ns | |||
tr | Rise Time | 15 | ns | ||||
td(off) | Turn Off Delay Time | 15 | ns | ||||
tf | Fall Time | 5 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | IDS = –5 A, VGS = 0 V | –0.8 | –1.0 | V | ||
Qrr | Reverse Recovery Charge | VDD = –10 V, IF = –5 A, di/dt = 200 A/μs | 9.2 | nC | |||
trr | Reverse Recovery Time | 13 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Thermal Resistance Junction to Case(1) | 4.5 | °C/W | ||
RθJA | Thermal Resistance Junction to Ambient(1)(2) | 55 |
|
Max RθJA = 55 when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. |
|
Max RθJA = 215 when mounted on minimum pad area of 2-oz. (0.071-mm thick) Cu. |
All other trademarks are the property of their respective owners.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms and definitions.