SLPS420F September   2013  – February 2022 CSD25481F4

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Support Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJC|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4 Revision History

Changes from Revision E (December 2017) to Revision F (February 2022)

  • Changed ultra-low profile bullet from 0.35 mm to 0.36 mm in height.Go
  • Updated ultra-low profile image height from 0.35 mm to 0.36 mm.Go
  • Changed ultra-low profile image height from 0.35 mm to 0.36 mm.Go
  • Added FemtoFET Surface Mount Guide note.Go

Changes from Revision D (October 2014) to Revision E (December 2017)

  • Changed the Pulsed Drain Current value From: –10 A To: –13.1 A in the Absolute Maximum Ratings table Go
  • Changed Note 1 From: Typical RθJA = 85°C/W To: Typical RθJA = 90°C/WGo
  • Changed Note 2 From: Pulse duration ≤ 300 μs, duty cycle ≤ 2% To: Pulse duration ≤ 100 μs, duty cycle ≤ 1% Go
  • Changed the typical RθJA values in the Thermal Information table Go
  • Updated Figure 5-1. Go
  • Updated Figure 5-10 with newly measured data. Go
  • Updated all mechanical drawings, increased the size of the pads in the Section 7.3 section. Go