This 29.7-mΩ, –20-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | –20 | V | |
Qg | Gate Charge Total (–4.5 V) | 2.7 | nC | |
Qgd | Gate Charge Gate-to-Drain | 0.56 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = –1.8 V | 89 | mΩ |
VGS = –2.5 V | 51 | |||
VGS = –4.5 V | 35 | |||
VGS = –8 V | 29.7 | |||
VGS(th) | Threshold Voltage | –0.95 | V |
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD25485F5 | 3000 | 7-Inch Reel | Femto 1.53-mm × 0.77-mm SMD Leadless | Tape and Reel |
CSD25485F5T | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | –20 | V |
VGS | Gate-to-Source Voltage | –12 | V |
ID | Continuous Drain Current(1) | –3.2 | A |
Continuous Drain Current(2) | –5.3 | ||
IDM | Pulsed Drain Current(1)(3) | –31 | A |
PD | Power Dissipation(1) | 0.5 | W |
Power Dissipation(2) | 1.4 | ||
V(ESD) | Human-Body Model (HBM) | 4000 | V |
Charged-Device Model (CDM) | 2000 | ||
TJ, Tstg | Operating Junction, Storage Temperature | –55 to 150 | °C |
Changes from Revision A (January 2017) to Revision B (February 2022)
Changes from Revision * (August 2016) to Revision A (January 2017)