This 29.7-mΩ, –20-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | –20 | V | |
Qg | Gate Charge Total (–4.5 V) | 2.7 | nC | |
Qgd | Gate Charge Gate-to-Drain | 0.56 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = –1.8 V | 89 | mΩ |
VGS = –2.5 V | 51 | |||
VGS = –4.5 V | 35 | |||
VGS = –8 V | 29.7 | |||
VGS(th) | Threshold Voltage | –0.95 | V |
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD25485F5 | 3000 | 7-Inch Reel | Femto 1.53-mm × 0.77-mm SMD Leadless | Tape and Reel |
CSD25485F5T | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | –20 | V |
VGS | Gate-to-Source Voltage | –12 | V |
ID | Continuous Drain Current(1) | –3.2 | A |
Continuous Drain Current(2) | –5.3 | ||
IDM | Pulsed Drain Current(1)(3) | –31 | A |
PD | Power Dissipation(1) | 0.5 | W |
Power Dissipation(2) | 1.4 | ||
V(ESD) | Human-Body Model (HBM) | 4000 | V |
Charged-Device Model (CDM) | 2000 | ||
TJ, Tstg | Operating Junction, Storage Temperature | –55 to 150 | °C |
Changes from Revision A (January 2017) to Revision B (February 2022)
Changes from Revision * (August 2016) to Revision A (January 2017)
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, IDS = –250 μA | –20 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = –16 V | –100 | nA | |||
IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = –12 V | –25 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = –250 μA | –0.7 | –0.95 | –1.3 | V | |
RDS(on) | Drain-to-source on resistance | VGS = –1.8 V, IDS = –0.1 A | 89 | 250 | mΩ | ||
VGS = –2.5 V, IDS = –0.9 A | 51 | 70 | |||||
VGS = –4.5 V, IDS = –0.9 A | 35 | 42 | |||||
VGS = –8 V, IDS = –0.9 A | 29.7 | 35 | |||||
gfs | Transconductance | VDS = –2 V, IDS = –0.9 A | 7 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input capacitance | VGS = 0 V, VDS = –10 V, ƒ = 1 MHz | 410 | 533 | pF | ||
Coss | Output capacitance | 212 | 276 | pF | |||
Crss | Reverse transfer capacitance | 17 | 23 | pF | |||
RG | Series gate resistance | 20 | Ω | ||||
Qg | Gate charge total (–4.5 V) | VDS = –10 V, IDS = –0.9 A | 2.7 | 3.5 | nC | ||
Qgd | Gate charge gate-to-drain | 0.56 | nC | ||||
Qgs | Gate charge gate-to-source | 0.67 | nC | ||||
Qg(th) | Gate charge at Vth | 0.40 | nC | ||||
Qoss | Output charge | VDS = –10 V, VGS = 0 V | 4.4 | nC | |||
td(on) | Turnon delay time | VDS = –10 V, VGS = –4.5 V, IDS = –0.9 A, RG = 2 Ω | 14 | ns | |||
tr | Rise time | 6 | ns | ||||
td(off) | Turnoff delay time | 27 | ns | ||||
tf | Fall time | 14 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | ISD = –0.9 A, VGS = 0 V | –0.75 | –1 | V |