SLPS692C October   2017  – June 2024 CSD25501F3

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJN|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This –20V, 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6V.

Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage –20 V
Qg Gate Charge Total (–4.5V) 1.02 nC
Qgd Gate Charge Gate-to-Drain 0.09 nC
RDS(on) Drain-to-Source
On-Resistance		 VGS = –1.8V 120 mΩ
VGS = –2.5V 86
VGS = –4.5V 64
VGS(th) Threshold Voltage –0.75 V
Device Information
DEVICE(1) QTY MEDIA PACKAGE SHIP
CSD25501F3 3000 7 Inch Reel Femto
0.73mm × 0.64mm
Land Grid Array (LGA)		 Tape
and
Reel
CSD25501F3T 250
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C (unless otherwise stated) VALUE UNIT
VDS Drain-to-Source Voltage –20 V
VGS Gate-to-Source Voltage –20 V
ID Continuous Drain Current(1) –3.6 A
IDM Pulsed Drain Current(1)(2) –13.6 A
PD Power Dissipation(1) 500 mW
V(ESD) Human Body Model (HBM) 4000 V
Charged Device Model (CDM) 2000
TJ,
Tstg		 Operating Junction,
Storage Temperature		 –55 to 150 °C
(1) Typical RθJA = 255°C/W mounted on FR4 material with minimum Cu mounting area.
(2) Pulse duration ≤ 100μs, duty cycle ≤ 1%.

CSD25501F3 Typical Part Dimensions...............Typical Part Dimensions
CSD25501F3 Top View......... Top View