SLPS692C October   2017  – June 2024 CSD25501F3

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)

4.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

CSD25501F3 Transient Thermal Impedance Figure 4-1 Transient Thermal Impedance
CSD25501F3 Saturation CharacteristicsFigure 4-2 Saturation Characteristics
CSD25501F3 Gate Charge
ID = –0.4A VDS = –10V
Figure 4-4 Gate Charge
CSD25501F3 Threshold Voltage vs Temperature
ID = –250µA
Figure 4-6 Threshold Voltage vs Temperature
CSD25501F3 Normalized On-State Resistance vs Temperature
ID = –0.4A
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD25501F3 Maximum Safe Operating Area
Single pulse, typical RθJA = 255°C/W
Figure 4-10 Maximum Safe Operating Area
CSD25501F3 Transfer Characteristics
VDS = –5V
Figure 4-3 Transfer Characteristics
CSD25501F3 CapacitanceFigure 4-5 Capacitance
CSD25501F3 On-State Resistance vs Gate-to-Source VoltageFigure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD25501F3 Typical Diode Forward VoltageFigure 4-9 Typical Diode Forward Voltage
CSD25501F3 Maximum Drain Current vs Temperature
Typical RθJA = 90°C/W
Figure 4-11 Maximum Drain Current vs Temperature