SLPS494C November   2014  – November 2023 CSD83325L

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Receiving Notification of Documentation Updates
    3. 5.3 Support Resources
    4. 5.4 Trademarks
    5. 5.5 Electrostatic Discharge Caution
    6. 5.6 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.

GUID-36F9CF0E-AD84-47E1-B58E-8C6689E36F33-low.gif Top View
GUID-2D3B1016-FA77-4F6C-8305-A330C929F79B-low.gif Configuration
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VS1S2 Source-to-Source Voltage 12 V
Qg Gate Charge Total (4.5 V) 8.4 nC
Qgd Gate Charge Gate-to-Drain 1.9 nC
RS1S2(on) Source-to-Source On Resistance VGS = 2.5 V 17.5 mΩ
VGS = 3.8 V 10.9 mΩ
VGS = 4.5 V 9.9 mΩ
VGS(th) Threshold Voltage 1.0 V
Device Information(1)
DEVICE QTY MEDIA PACKAGE SHIP
CSD83325L 3000 7-Inch Reel 2.20-mm × 1.15-mm
Land Grid Array (LGA)
Package		 Tape and Reel
CSD83325LT 250
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VS1S2 Source-to-Source Voltage 12 V
VGS Gate-to-Source Voltage ±10 V
IS Continuous Source Current(1) 8 A
ISM Pulsed Source Current(2) 52 A
PD Power Dissipation 2.3 W
V(ESD) Human-Body Model (HBM) 2000 V
TJ,
Tstg		 Operating Junction Temperature,
Storage Temperature		 –55 to 150 °C
(1) Device operating at a temperature of 105°C.
(2) Typical min Cu RθJA = 150°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

GUID-DB2742C4-00B6-4A4E-BE1C-BCE05149E908-low.gif RDS(on) vs VGS
GUID-527630A4-6137-4066-A2A7-69CA45765921-low.gif Gate Charge