SLPS494C November 2014 – November 2023 CSD83325L
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVS1S2 | Source-to-source voltage | VGS = 0 V, IS = 250 μA | 12 | V | |||
| IS1S2 | Source-to-source leakage current | VGS = 0 V, VS1S2 = 9.6 V | 1.0 | μA | |||
| IGSS | Gate-to-source leakage current | VS1S2 = 0 V, VGS = 10 V | 10 | µA | |||
| VGS(th) | Gate-to-source threshold voltage | VS1S2 = VGS, IS = 250 μA | 0.7 | 1.0 | 1.4 | V | |
| RS1S2(on) | Source-to-source on resistance | VGS = 2.5 V, IS = 5 A | 12.0 | 17.5 | 23.0 | mΩ | |
| VGS = 3.8 V, IS = 5 A | 8.8 | 10.9 | 13.0 | mΩ | |||
| VGS = 4.5 V, IS = 5 A | 7.9 | 9.9 | 11.9 | mΩ | |||
| gfs | Transconductance | VS1S2 = 1.2 V, IS = 5 A | 36 | S | |||
| DYNAMIC CHARACTERISTICS(1) | |||||||
| Ciss | Input capacitance | VGS = 0 V, VS1S2 = 6 V, ƒ = 1 MHz | 902 | 1170 | pF | ||
| Coss | Output capacitance | 187 | 243 | pF | |||
| Crss | Reverse transfer capacitance | 111 | 144 | pF | |||
| Qg | Gate charge total (4.5 V) | VS1S2 = 6 V, IS = 5 A | 8.4 | 10.9 | nC | ||
| Qgd | Gate charge gate-to-drain | 1.9 | nC | ||||
| Qgs | Gate charge gate-to-source | 2.2 | nC | ||||
| Qg(th) | Gate charge at Vth | 0.6 | nC | ||||
| Qoss | Output charge | VS1S2 = 6 V, VGS = 0 V | 2.9 | nC | |||
| td(on) | Turnon delay time | VS1S2 = 6 V, VGS = 4.5 V, IS1S2 = 5 A, RG = 0 Ω | 205 | ns | |||
| tr | Rise time | 353 | ns | ||||
| td(off) | Turnoff delay time | 711 | ns | ||||
| tf | Fall time | 589 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VF(S-S) | Source-to-source diode forward voltage | ISS = 5 A, VG1S1 = 0 V, VG2S2 = 4.5 V | 0.79 | 1.0 | V | ||