SLPS521 Data sheet

SLPS521A December 2014 – May 2024 CSD85301Q2

PRODUCTION DATA

Refer to the PDF data sheet for device specific package drawings

4.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0V, I_D = 250μA	20			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0V, V_DS = 16V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0V, V_GS = 10V			10	μA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250μA	0.6	0.9	1.2	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 1.8V, I_D = 0.5A		65	99	mΩ
		V_GS = 2.5V, I_D = 5A		33	39	mΩ
		V_GS = 3.8V, I_D = 5A		25	29	mΩ
		V_GS = 4.5V, I_D = 5A		23	27	mΩ
g_fs	Transconductance	V_DS = 2V, I_D = 5A		20		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0V, V_DS = 10V, ƒ = 1MHz		361	469	pF
C_oss	Output Capacitance			68	89	pF
C_rss	Reverse Transfer Capacitance			48	62	pF
R_G	Series Gate Resistance			7.3		Ω
Q_g	Gate Charge Total (4.5V)	V_DS = 10V, I_D = 5A		4.2	5.4	nC
Q_gd	Gate Charge Gate-to-Drain			1.0		nC
Q_gs	Gate Charge Gate-to-Source			1.1		nC
Q_g(th)	Gate Charge at V_th			0.5		nC
Q_oss	Output Charge	V_DS = 10V, V_GS = 0V		1.3		nC
t_d(on)	Turn On Delay Time	V_DS = 10V, V_GS = 5V, I_DS = 5A, R_G = 0Ω		6		ns
t_r	Rise Time			26		ns
t_d(off)	Turn Off Delay Time			14		ns
t_f	Fall Time			15		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 5A, V_GS = 0V		0.8	1.0	V
Q_rr	Reverse Recovery Charge	V_DS= 10V, I_F = 5A, di/dt = 300A/μs		7.2		nC
t_rr	Reverse Recovery Time	V_DS= 10V, I_F = 5A, di/dt = 300A/μs		14		ns