SLPS223F May 2010 – October 2016 CSD86350Q5D
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage | VIN to PGND | –0.8 | 25 | V |
TG to TGR | –8 | 10 | ||
BG to PGND | –8 | 10 | ||
Pulsed current rating, IDM(2) | 120 | A | ||
Power dissipation, PD | 13 | W | ||
Avalanche energy, EAS | Sync FET, ID = 100 A, L = 0.1 mH | 500 | mJ | |
Control FET, ID = 58 A, L = 0.1 mH | 168 | |||
Operating junction, TJ | –55 | 150 | °C | |
Storage temperature, TSTG | –55 | 150 | °C |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VGS | Gate drive voltage | 4.5 | 8 | V | |
VIN | Input supply voltage | 22 | V | ||
fSW | Switching frequency | CBST = 0.1 μF (min) | 200 | 1500 | kHz |
Operating current | 40 | A | |||
TJ | Operating temperature | 125 | °C |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJA | Junction-to-ambient thermal resistance (min Cu)(1)(2) | 102 | °C/W | ||
Junction-to-ambient thermal resistance (max Cu)(1)(2) | 50 | °C/W | |||
RθJC | Junction-to-case thermal resistance (top of package)(2) | 20 | °C/W | ||
Junction-to-case thermal resistance (PGND pin)(2) | 2 | °C/W |
PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PLOSS | Power loss(1) | VIN = 12 V, VGS = 5 V, VOUT = 1.3 V, IOUT = 25 A, fSW = 500 kHz, LOUT = 0.3 µH, TJ = 25°C |
2.8 | W | ||
IQVIN | VIN quiescent current | TG to TGR = 0 V BG to PGND = 0 V |
10 | µA |
PARAMETER | TEST CONDITIONS | Q1 Control FET | Q2 Sync FET | UNIT | ||||||
---|---|---|---|---|---|---|---|---|---|---|
MIN | TYP | MAX | MIN | TYP | MAX | |||||
STATIC CHARACTERISTICS | ||||||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, IDS = 250 μA | 25 | 25 | V | |||||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 20 V | 1 | 1 | μA | |||||
IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = +10 / –8 V | 100 | 100 | nA | |||||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = 250 μA | 0.9 | 1.4 | 2.1 | 0.9 | 1.1 | 1.6 | V | |
ZDS(on) | Drain-to-source on impedance | VIN = 12 V, VDD = 5 V, VOUT = 1.3 V, IOUT = 25 A, fSW = 500 kHz, LOUT = 0.3 µH |
5 | 1.1 | mΩ | |||||
gfs | Transconductance | VDS = 10 V, IDS = 20 A | 103 | 132 | S | |||||
DYNAMIC CHARACTERISTICS | ||||||||||
CISS | Input capacitance(1) | VGS = 0 V, VDS = 12.5 V, f = 1 MHz |
1440 | 1870 | 3080 | 4000 | pF | |||
COSS | Output capacitance(1) | 645 | 840 | 1550 | 2015 | pF | ||||
CRSS | Reverse transfer capacitance(1) | 22 | 29 | 45 | 59 | pF | ||||
RG | Series gate resistance(1) | 1.4 | 2.8 | 1.4 | 2.8 | Ω | ||||
Qg | Gate charge total (4.5 V)(1) | VDS = 12.5 V, IDS = 20 A |
8.2 | 10.7 | 19.4 | 25 | nC | |||
Qgd | Gate charge – gate-to-drain | 1 | 2.5 | nC | ||||||
Qgs | Gate charge – gate-to-source | 3.2 | 5.1 | nC | ||||||
Qg(th) | Gate charge at Vth | 1.9 | 2.8 | nC | ||||||
QOSS | Output charge | VDS = 12 V, VGS = 0 V | 9.9 | 28 | nC | |||||
td(on) | Turnon delay time | VDS = 12.5 V, VGS = 4.5 V, IDS = 20 A, RG = 2 Ω |
8 | 9 | ns | |||||
tr | Rise time | 21 | 23 | ns | ||||||
td(off) | Turnoff delay time | 9 | 24 | ns | ||||||
tf | Fall time | 2.3 | 21 | ns | ||||||
DIODE CHARACTERISTICS | ||||||||||
VSD | Diode forward voltage | IDS = 20 A, VGS = 0 V | 0.85 | 1 | 0.77 | 1 | V | |||
Qrr | Reverse recovery charge | Vdd = 12 V, IF = 20 A, di/dt = 300 A/μs |
16 | 40 | nC | |||||
trr | Reverse recovery time | 22 | 32 | ns |
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Max RθJA = 50°C/W when mounted on 1-in2 (6.45-cm2) of 2-oz (0.071-mm) thick Cu. |
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Max RθJA = 102°C/W when mounted on minimum pad area of 2-oz (0.071-mm) thick Cu. |