SLPS327B September   2012  – April 2018 CSD86360Q5D

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
    1. 3.1 Top View
      1.      Device Images
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Power Block Performance
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Power Block Device Characteristics
    7. 5.7 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Equivalent System Performance
      2. 6.1.2 Power Loss Curves
      3. 6.1.3 Safe Operating Area (SOA) Curves
      4. 6.1.4 Normalized Curves
    2. 6.2 Typical Application
      1. 6.2.1 Design Example: Calculating Power Loss and SOA
        1. 6.2.1.1 Operating Conditions
        2. 6.2.1.2 Calculating Power Loss
        3. 6.2.1.3 Calculating SOA Adjustments
  7. 7Layout
    1. 7.1 Layout Guidelines
      1. 7.1.1 Electrical Performance
      2. 7.1.2 Thermal Performance
    2. 7.2 Layout Example
  8. 8Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Community Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Q5D Package Dimensions
    2. 9.2 Land Pattern Recommendation
    3. 9.3 Stencil Recommendation
    4. 9.4 Q5D Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.1 Absolute Maximum Ratings

TA = 25°C (unless otherwise noted) (1)
PARAMETER CONDITIONS MIN MAX UNIT
Voltage VIN to PGND 25 V
VSW to PGND 25
VSW to PGND (10 ns) 27
TG to TGR –8 10
BG to PGND –8 10
Pulsed current rating, IDM(2) 120 A
Power dissipation, PD(3) 13 W
Avalanche energy, EAS Sync FET, ID = 110 A, L = 0.1 mH 605 mJ
Control FET, ID = 61 A, L = 0.1 mH 186
Operating junction, TJ –55 150 °C
Storage temperature, TSTG –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Pulse duration ≤ 50 µs. Duty cycle ≤ 0.01%.
(3) TPCB ≤ 95°C.