SLPS327B September   2012  – April 2018 CSD86360Q5D

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
    1. 3.1 Top View
      1.      Device Images
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Power Block Performance
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Power Block Device Characteristics
    7. 5.7 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Equivalent System Performance
      2. 6.1.2 Power Loss Curves
      3. 6.1.3 Safe Operating Area (SOA) Curves
      4. 6.1.4 Normalized Curves
    2. 6.2 Typical Application
      1. 6.2.1 Design Example: Calculating Power Loss and SOA
        1. 6.2.1.1 Operating Conditions
        2. 6.2.1.2 Calculating Power Loss
        3. 6.2.1.3 Calculating SOA Adjustments
  7. 7Layout
    1. 7.1 Layout Guidelines
      1. 7.1.1 Electrical Performance
      2. 7.1.2 Thermal Performance
    2. 7.2 Layout Example
  8. 8Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Community Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Q5D Package Dimensions
    2. 9.2 Land Pattern Recommendation
    3. 9.3 Stencil Recommendation
    4. 9.4 Q5D Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.1.1 Electrical Performance

The power block has the ability to switch voltages at rates greater than 10 kV/µs. Special care must be then taken with the PCB layout design and placement of the input capacitors, driver IC, and output inductor.

  • The placement of the input capacitors relative to the power block’s VIN and PGND pins should have the highest priority during the component placement routine. It is critical to minimize these node lengths. As such, ceramic input capacitors need to be placed as close as possible to the VIN and PGND pins (see Figure 34). The example in Figure 34 uses 6 × 10-µF ceramic capacitors (TDK Part # C3216X5R1C106KT or equivalent). Notice there are ceramic capacitors on both sides of the board with an appropriate amount of vias interconnecting both layers. In terms of priority of placement next to the power block, C5, C7, C19, and C8 should follow in order.
  • The driver IC should be placed relatively close to the power block gate pins. TG and BG should connect to the outputs of the driver IC. The TGR pin serves as the return path of the high-side gate drive circuitry and should be connected to the phase pin of the IC (sometimes called LX, LL, SW, PH, etc.). The bootstrap capacitor for the driver IC will also connect to this pin.
  • The switching node of the output inductor should be placed relatively close to the power block VSW pins. Minimizing the node length between these two components will reduce the PCB conduction losses and actually reduce the switching noise level. In the event the switch node waveform exhibits ringing that reaches undesirable levels, the use of a boost resistor or RC snubber can be an effective way to easily reduce the peak ring level. The recommended boost resistor value will range between 1 Ω to 4.7 Ω depending on the output characteristics of driver IC used in conjunction with the power block. The RC snubber values can range from 0.5 Ω to 2.2 Ω for the R and 330 pF to 2200 pF for the C. Please refer to TI App Note Snubber Circuits: Theory, Design and Application (SLUP100) for more details on how to properly tune the RC snubber values. The RC snubber should be placed as close as possible to the VSW node and PGND see Figure 34(1)
    • 1. Keong W. Kam, David Pommerenke, “EMI Analysis Methods for Synchronous Buck Converter EMI Root Cause Analysis”, University of Missouri – Rolla