SLPS574B February 2016 – April 2018 CSD87335Q3D
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | Q1 Control FET | Q2 Sync FET | UNIT | ||||||
---|---|---|---|---|---|---|---|---|---|---|
MIN | TYP | MAX | MIN | TYP | MAX | |||||
STATIC CHARACTERISTICS | ||||||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, IDS = 250 µA | 30 | 30 | V | |||||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 24 V | 1 | 1 | µA | |||||
IGSS | Gate-to-source leakage current | VDS = 0 V,
VGS = +10 V / –8 V |
100 | 100 | nA | |||||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = 250 µA | 1.0 | 1.9 | 0.75 | 1.20 | V | |||
ZDS(on) | Effective AC on-impedance | VIN = 12 V, VGS = 5 V, VOUT = 1.3 V, IOUT = 15 A, ƒSW = 500 kHz,
LOUT = 950 nH |
6.7 | 1.9 | mΩ | |||||
gfs | Transconductance | VDS = 3 V, IDS = 15 A | 59 | 107 | S | |||||
DYNAMIC CHARACTERISTICS | ||||||||||
CISS | Input capacitance | VGS = 0 V, VDS = 15 V,
ƒ = 1 MHz |
805 | 1050 | 1620 | 2100 | pF | |||
COSS | Output capacitance | 412 | 536 | 783 | 1020 | pF | ||||
CRSS | Reverse transfer capacitance | 15 | 20 | 28 | 36 | pF | ||||
RG | Series gate resistance | 1.2 | 2.4 | 0.6 | 1.2 | Ω | ||||
Qg | Gate charge total (4.5 V) | VDS = 15 V,
IDS = 15 A |
5.7 | 7.4 | 10.7 | 14.0 | nC | |||
Qgd | Gate charge – gate-to-drain | 1.1 | 1.7 | nC | ||||||
Qgs | Gate charge – gate-to-source | 2.1 | 2.8 | nC | ||||||
Qg(th) | Gate charge at Vth | 1.1 | 1.4 | nC | ||||||
QOSS | Output charge | VDS = 15 V, VGS = 0 V | 11 | 19 | nC | |||||
td(on) | Turnon delay time | VDS = 15 V, VGS = 4.5 V,
IDS = 15 A, RG = 2 Ω |
8 | 8 | ns | |||||
tr | Rise time | 29 | 27 | ns | ||||||
td(off) | Turnoff delay time | 13 | 17 | ns | ||||||
tf | Fall time | 4 | 5 | ns | ||||||
DIODE CHARACTERISTICS | ||||||||||
VSD | Diode forward voltage | IDS = 15 A, VGS = 0 V | 0.8 | 1.0 | 0.8 | 1.0 | V | |||
Qrr | Reverse recovery charge | VDS = 15 V, IF = 15 A,
di/dt = 300 A/µs |
24 | 40 | nC | |||||
trr | Reverse recovery time | 17 | 22 | ns |
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Max RθJA = 73°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu. |
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Max RθJA = 135°C/W when mounted on minimum pad area of 2-oz. (0.071-mm) thick Cu. |