SLPS415D September 2013 – March 2015 CSD87384M
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Voltage | VIN to PGND | –0.8 | 30 | V | |
VSW to PGND | 30 | ||||
VSW to PGND (10 ns) | 32 | ||||
TG to VSW | –8 | 10 | |||
BG to PGND | –8 | 10 | |||
IDM | Pulsed Current Rating(2) | 95 | A | ||
PD | Power Dissipation(3) | 8 | W | ||
EAS | Avalanche Energy | Sync FET, ID = 68, L = 0.1 mH | 231 | mJ | |
Control FET, ID = 31, L = 0.1 mH | 48 | ||||
TJ | Operating Junction | –55 | 150 | °C | |
Tstg | Storage Temperature Range | –55 | 150 | °C |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VGS | Gate Drive Voltage | 4.5 | 8 | V | |
VIN | Input Supply Voltage | 24 | V | ||
ƒSW | Switching Frequency | CBST = 0.1 μF (min) | 200 | 1500 | kHz |
Operating Current | No Airflow | 30 | A | ||
With Airflow (200 LFM) | 35 | A | |||
With Airflow + Heat Sink | 40 | A | |||
TJ | Operating Temperature | 125 | °C |
PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PLOSS | Power Loss(1) | VIN = 12 V, VGS = 5 V VOUT = 1.3 V, IOUT = 25 A fSW = 500 kHz LOUT = 0.3 µH, TJ = 25ºC |
3.7 | W | ||
IQVIN | VIN Quiescent Current | TG to TGR = 0 V BG to PGND = 0 V |
10 | µA |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJA | Junction-to-ambient thermal resistance (Min Cu) (2) | 153 | °C/W | ||
Junction-to-ambient thermal resistance (Max Cu) (1)(2) | 67 | ||||
RθJC | Junction-to-case thermal resistance (Top of package) (2) | 3.0 | |||
Junction-to-case thermal resistance (PGND Pin) (2) | 1.25 |
PARAMETER | TEST CONDITIONS | Q1 Control FET | Q2 Sync FET | UNIT | ||||||
---|---|---|---|---|---|---|---|---|---|---|
MIN | TYP | MAX | MIN | TYP | MAX | |||||
STATIC CHARACTERISTICS | ||||||||||
BVDSS | Drain-to-Source Voltage | VGS = 0 V, IDS = 250 μA | 30 | 30 | V | |||||
IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = 24 V | 1 | 1 | μA | |||||
IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = 10 V | 100 | 100 | nA | |||||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, IDS = 250 μA | 1.1 | 1.9 | 1.1 | 1.7 | V | |||
RDS(on) | Drain-to-Source On-Impedance | VGS = 4.5 V, IDS = 25 A | 7.5 | 8.9 | 2.15 | 2.6 | mΩ | |||
VGS = 8 V, IDS = 25 A | 6.4 | 7.7 | 1.95 | 2.4 | ||||||
gƒs | Transconductance | VDS = 10 V, IDS = 25 A | 67 | 240 | S | |||||
DYNAMIC CHARACTERISTICS | ||||||||||
CISS | Input Capacitance (1) | VGS = 0 V, VDS = 15 V, f = 1MHz |
884 | 1150 | 3760 | 4890 | pF | |||
COSS | Output Capacitance (1) | 452 | 588 | 1110 | 1440 | pF | ||||
CRSS | Reverse Transfer Capacitance (1) | 19.4 | 25.2 | 87 | 114 | pF | ||||
RG | Series Gate Resistance (1) | 1.0 | 2.0 | 0.7 | 1.4 | Ω | ||||
Qg | Gate Charge Total (4.5 V) (1) | VDS = 15 V, IDS = 25 A |
7.1 | 9.2 | 31 | 40 | nC | |||
Qgd | Gate Charge – Gate-to-Drain | 1.5 | 8.6 | nC | ||||||
Qgs | Gate Charge – Gate-to-Source | 2.7 | 8.6 | nC | ||||||
Qg(th) | Gate Charge at Vth | 1.3 | 5.4 | nC | ||||||
QOSS | Output Charge | VDD = 12 V, VGS = 0 V | 11.3 | 37 | nC | |||||
td(on) | Turn On Delay Time | VDS = 15 V, VGS = 4.5 V, IDS = 25 A, RG = 2 Ω |
8.7 | 17.5 | ns | |||||
tr | Rise Time | 56 | 49 | ns | ||||||
td(off) | Turn-Off Delay Time | 14 | 29 | ns | ||||||
tƒ | Fall Time | 7.6 | 8.2 | ns | ||||||
DIODE CHARACTERISTICS | ||||||||||
VSD | Diode Forward Voltage | IDS = 25 A, VGS = 0 V | 0.85 | 0.80 | V | |||||
Qrr | Reverse Recovery Charge | Vdd = 15 V, IF = 25 A, di/dt = 300 A/μs |
21 | 51 | nC | |||||
trr | Reverse Recovery Time | 21 | 32 | ns |
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Max RθJA = 67°C/W when mounted on 1 inch2 (6.45 cm2) of 2 oz. (0.071 mm thick) Cu. |
|
Max RθJA = 153°C/W when mounted on minimum pad area of 2 oz. (0.071 mm thick) Cu. |