SLPS523B February   2015  – May 2019 CSD87501L

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
    1.     Top View
    2.     Configuration
      1.      Device Images
        1.       RS1S2(on) vs VGS
        2.       Gate Charge
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJG|10
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.1 Electrical Characteristics

TA = 25°C unless otherwise stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVS1S2 Source-to-source voltage VGS = 0 V, IS = 250 μA 30 V
IS1S2 Source-to-source leakage current VGS = 0 V, VS1S2 = 24 V 1 μA
IGSS Gate-to-source leakage current VS1S2 = 0 V, VGS = 20 V 10 µA
VGS(th) Gate-to-source threshold voltage VS1S2 = VGS, IS = 250 μA 1.3 1.8 2.3 V
RS1S2(on) Source-to-source on-resistance VGS = 4.5 V, IS = 7 A 9.3 11.0 mΩ
VGS = 10 V, IS = 7 A 6.6 7.8
gfs Transconductance VS1S2 = 3 V, IS = 7 A 48 S
DYNAMIC CHARACTERISTICS(1)
Ciss Input capacitance VGS = 0 V, VS1S2 = 15 V, ƒ = 1 MHz 1620 2110 pF
Coss Output capacitance 189 246 pF
Crss Reverse transfer capacitance 152 198 pF
RG Series gate resistance 300 450 Ω
Qg Gate charge total (4.5 V) VS1S2 = 15 V, IS = 7 A 15 20 nC
Qg Gate charge total (10 V) 31 40 nC
Qgd Gate charge gate-to-drain 6.0 nC
Qgs Gate charge gate-to-source 5.0 nC
Qg(th) Gate charge at Vth 2.5 nC
Qoss Output charge VS1S2 = 15 V, VGS = 0 V 7.6 nC
td(on) Turn on delay time VS1S2 = 15 V, VGS = 10 V,
IS1S2 = 7 A, RG = 0 Ω		 164 ns
tr Rise time 260 ns
td(off) Turn off delay time 709 ns
tf Fall time 712 ns
(1) Dynamic characteristics values specified are per single FET.