STATIC CHARACTERISTICS |
BVDSS |
Drain-to-source voltage |
VGS = 0 V, ID = 250 μA |
30 |
|
|
V |
IDSS |
Drain-to-source leakage current |
VGS = 0 V, VDS = 24 V |
|
|
1 |
μA |
IGSS |
Gate-to-source leakage current |
VDS = 0 V, VGS = 20 V |
|
|
4 |
μA |
VGS(th) |
Gate-to-source threshold voltage |
VDS = VGS, ID = 250 μA |
1.2 |
1.6 |
2.0 |
V |
RDS(on) |
Drain-to-source on-resistance |
VGS = 3.8 V, ID = 4 A |
|
42.0 |
60.0 |
mΩ |
VGS = 4.5 V, ID = 4 A |
|
35.5 |
42.0 |
mΩ |
VGS = 10 V, ID = 4 A |
|
27.0 |
32.4 |
mΩ |
gfs |
Transconductance |
VDS = 3 V, ID = 4 A |
|
75 |
|
S |
DYNAMIC CHARACTERISTICS |
Ciss |
Input capacitance |
VGS = 0 V, VDS = 15 V, ƒ = 1 MHz |
|
272 |
353 |
pF |
Coss |
Output capacitance |
|
42 |
55 |
pF |
Crss |
Reverse transfer capacitance |
|
22 |
29 |
pF |
RG |
Series gate resistance |
|
|
6.9 |
|
Ω |
Qg |
Gate charge total (4.5 V) |
VDS = 15 V, ID = 4 A |
|
2.2 |
2.9 |
nC |
Qg |
Gate charge total (10 V) |
|
4.6 |
6.0 |
nC |
Qgd |
Gate charge gate to drain |
|
0.5 |
|
nC |
Qgs |
Gate charge gate to source |
|
1.0 |
|
nC |
Qg(th) |
Gate charge at Vth |
|
0.5 |
|
nC |
Qoss |
Output charge |
VDS = 15 V, VGS = 0 V |
|
1.4 |
|
nC |
td(on) |
Turn on delay time |
VDS = 15 V, VGS = 5 V, IDS = 4 A, RG = 0 Ω |
|
3 |
|
ns |
tr |
Rise time |
|
11 |
|
ns |
td(off) |
Turn off delay time |
|
12 |
|
ns |
tf |
Fall time |
|
3 |
|
ns |
DIODE CHARACTERISTICS |
VSD |
Diode forward voltage |
ISD = 4 A, VGS = 0 V |
|
0.85 |
1.0 |
V |
Qrr |
Reverse recovery charge |
VDS= 15 V, IF = 4 A, di/dt = 300 A/μs |
|
4.0 |
|
nC |
trr |
Reverse recovery time |
|
6.4 |
|
ns |