CSD87503Q3E 30-V N-Channel NexFET™ Power MOSFETs

1 Features

Dual N-Ch Common Source MOSFETs
Optimized for 5-V Gate Drive
Low-Thermal Resistance
Low Q_g and Q_gd
Lead-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3-mm × 3.3-mm Plastic Package

2 Applications

USB Type-C/PD VBus Protection
Battery Protection
Load Switch

3 Description

The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has low drain-to-drain on-resistance that minimizes losses and offers low component count for space constrained applications.

Top View

Circuit Image

Product Summary

T_A = 25°C		VALUE		UNIT
V_DS	Drain-to-Source Voltage	30		V
Q_g	Gate Charge Total (4.5 V)	13.4		nC
Q_gd	Gate Charge Gate-to-Drain	5.8		nC
R_DD(on)	Drain-to-Drain On-Resistance	V_GS= 4.5 V	17.3	mΩ
R_DD(on)	Drain-to-Drain On-Resistance	V_GS = 10 V	13.5	mΩ
V_GS(th)	Threshold Voltage	1.7		V

Device Information⁽¹⁾

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD87503Q3E	2500	13-Inch Reel	SON 3.30-mm × 3.30-mm Plastic Package	Tape and Reel
CSD87503Q3ET	250	7-Inch Reel	SON 3.30-mm × 3.30-mm Plastic Package	Tape and Reel

For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	30	V
V_GS	Gate-to-Source Voltage	±20	V
I_{D1, D2}	Continuous Drain-to-Drain Current (Package Limited)	10	A
I_DS	Continuous Drain-to-Source Current (Package Limited)	1.5	A
I_{D1, D2M}	Pulsed Drain-to-Drain Current,⁽¹⁾	89	A
P_D	Power Dissipation⁽²⁾	2.6	W
P_D	Power Dissipation, T_C = 25°C	15.6	W
T_J, T_stg	Operating Junction, Storage Temperature	–55 to 150	°C

Max R_θJC = 8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
Typical R_θJA = 50°C/W when mounted on a 1-in² (6.45-cm²), 2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.

R_DD(on) vs V_GS

4 Revision History

DATE	REVISION	NOTES
September 2017	*	Initial release.

5 Specifications

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage⁽¹⁾	V_GS = 0 V, I_D = 250 μA	30			V
I_DSS	Drain-to-source leakage current⁽¹⁾	V_GS = 0 V, V_DS = 24 V			1	μA
I_GSS	Gate-to-source leakage current⁽¹⁾	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-source threshold voltage⁽¹⁾	V_DS = V_GS, I_D = 250 μA	1.3	1.7	2.1	V
R_DD(on)	Drain-to-drain on-resistance	V_GS = 4.5 V, I_D1D2 = 6 A		17.3	21.9	mΩ
R_DD(on)	Drain-to-drain on-resistance	V_GS = 10 V, I_D1D2 = 6 A		13.5	16.9	mΩ
g_fs	Transconductance	V_DS = 3 V, I_D1D2 = 6 A		24		S
DYNAMIC CHARACTERISTICS
C_ISS	Input capacitance	V_GS = 0 V, V_D1D2 = 15 V, ƒ = 1 MHz		782	1020	pF
C_OSS	Output capacitance			157	204	pF
C_RSS	Reverse transfer capacitance			149	194	pF
R_g	Series gate resistance⁽¹⁾			1.5	3.0	Ω
Q_g	Gate charge total (4.5 V)	V_D1D2 = 15 V, I_D1D2 = 6 A		13.4	17.4	nC
Q_g	Gate charge total (10 V)			32.9	42.8	nC
Q_gd	Gate charge gate-to-drain			5.8		nC
Q_gs	Gate charge gate-to-source			4.8		nC
Q_g(th)	Gate charge at V_th			1.0		nC
Q_OSS	Output charge	V_D1D2 = 15 V, V_GS = 0 V		4.3		nC
t_d(on)	Turnon delay time	V_D1D2 = 15 V, V_GS = 10 V, I_D1D2 = 6 A, R_G = 0 Ω		10		ns
t_r	Rise time			40		ns
t_d(off)	Turnoff delay time			25		ns
t_f	Fall time			8		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage⁽¹⁾	I_D = 0.5 A, V_GS = 0 V		0.75	0.95	V
Q_rr	Reverse recovery charge⁽¹⁾	V_DS = 15 V, I_F = 6 A, di/dt = 300 A/μs		9.2		nC
t_rr	Reverse recovery time⁽¹⁾	V_DS = 15 V, I_F = 6 A, di/dt = 300 A/μs		14		ns

(1) Parameter measured on both MOSFETs individually. Table values are for a single FET.

5.2 Thermal Information

T_A = 25°C (unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-case thermal resistance⁽¹⁾			8	°C/W
R_θJA	Junction-to-ambient thermal resistance⁽¹⁾⁽²⁾			60	°C/W

(1) R_θJC is determined with the device mounted on a 1-in² (6.45-cm²), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1-in² (6.45-cm²), 2-oz (0.071-mm) thick Cu.