DATA SHEET
CSD95372BQ5M Synchronous Buck NexFET Smart Power Stage
1 Features
- 60 A Continuous Operating Current Capability
- 93.4% System Efficiency at 30 A
- Low Power Loss of 2.8 W at 30 A
- High-Frequency Operation (up to 1.25 MHz)
- Diode Emulation Mode With FCCM
- Temperature Compensated Bi-Directional Current Sense
- Analog Temperature Output (600 mV at 0°C)
- Fault Monitoring
- High-Side Short, Overcurrent, and Overtemperature Protection
- 3.3 and 5-V PWM Signal Compatible
- Tri-State PWM Input
- Integrated Bootstrap Diode
- Optimized Deadtime for Shoot Through Protection
- High-Density SON 5 × 6 mm Footprint
- Ultra-Low Inductance Package
- System Optimized PCB Footprint
- RoHS Compliant – Lead-Free Terminal Plating
- Halogen Free
2 Applications
- Multiphase Synchronous Buck Converters
- High-Frequency Applications
- High-Current, Low-Duty Cycle Applications
- POL DC-DC Converters
- Memory and Graphic Cards
- Desktop and Server VR11.x / VR12.x V-Core and Memory Synchronous Converters
3 Description
The CSD95372BQ5M NexFET™ smart power stage is a highly optimized design for use in a high-power, high-density Synchronous Buck converter. This product integrates the Driver IC and Power MOSFETs to complete the power stage switching function. This combination produces high-current, high-efficiency, and high-speed switching capability in a small 5-mm × 6-mm outline package. It also integrates the accurate current sensing and temperature sensing functionality to simplify system design and improve accuracy. In addition, the PCB footprint has been optimized to help reduce design time and simplify the completion of the overall system design.
Device Information(1)
| Device | Media | Qty | Package | Ship |
|---|---|---|---|---|
| CSD95372BQ5M | 13-Inch Reel | 2500 | SON 5 mm × 6 mm Package |
Tape and Reel |
| CSD95372BQ5MT | 7-Inch Reel | 250 |
- For all available packages, see the orderable addendum at the end of the data sheet.
SPACER
Application Diagram
Typical Power Stage Efficiency and Power Loss
4 Revision History
Changes from A Revision (June 2014) to B Revision
- Changed application schematic to show IOUT (not IMON) for each CSD95372B device. Go
Changes from * Revision (March 2014) to A Revision
- Removed "input voltage up to 14.5 V" and "DualCool™ package" bullets from the Features Go
- Fixed TAO/FAULT pin function to state that TAO will be pulled up to 3.3 V in the event of thermal shutdown Go
- Added minimum ESD Ratings Go
- Increased maximum input voltage to 16 V Go
- Added table note for max input voltage Go
5 Pin Configuration and Functions
Top View
Pin Functions
6 Specifications
6.1 Absolute Maximum Ratings
TA = 25°C (unless otherwise noted)(1)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VIN to PGND | –0.3 | 25 | V | |
| VIN to VSW | –0.3 | 25 | V | |
| VIN to VSW (10 ns) | –7 | 27 | V | |
| VSW to PGND | –0.3 | 20 | V | |
| VSW to PGND (10 ns) | –7 | 23 | V | |
| VDD to PGND | –0.3 | 7 | V | |
| ENABLE, PWM, FCCM. TAO, IOUT, REFIN to PGND | –0.3 | VDD + 0.3 V | V | |
| BOOT to BOOT_R(2) | –0.3 | VDD + 0.3 V | V | |
| PD, power dissipation | 12 | W | ||
| TJ, operating junction | –55 | 150 | °C | |
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Should not exceed 7 V
6.2 Handling Ratings
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| Tstg | Storage temperature range | –55 | 150 | °C | |
| V(ESD) | Electrostatic discharge | Human body model (HBM) | –2000 | 2000 | V |
| Charged device model (CDM) | –500 | 500 | V | ||
6.3 Recommended Operating Conditions
TA = 25° (unless otherwise noted)| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VDD | Gate drive voltage | 4.5 | 5.5 | V | |
| VIN | Input supply voltage(1) | 16 | V | ||
| VOUT | Output voltage | 5.5 | V | ||
| IOUT | Continuous output current | VIN = 12 V, VDD = 5 V, VOUT = 1.2 V, ƒSW = 500 kHz, LOUT = 0.225 µH(2) |
60 | ||
| IOUT-PK | Peak output current(3) | 90 | A | ||
| ƒSW | Switching frequency | CBST = 0.1 µF (min) | 1250 | kHz | |
| On-time duty cycle | ƒSW = 1 MHz | 85 | % | ||
| Minimum PWM on-time | 40 | ns | |||
| Operating temperature | –40 | 125 | °C | ||
(1) Operating at high VIN can create excessive AC voltage overshoots on the switch node (VSW) during MOSFET switching transients. For reliable operation, the switch node (VSW) to ground voltage must remain at or below the Absolute Maximum Ratings.
(2) Measurement made with six 10 µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins.
(3) System conditions as defined in Note 1. Peak output current is applied for tp = 50 µs.
6.4 Thermal Information
TA = 25°C (unless otherwise noted)| THERMAL METRIC | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|
| RθJC | Junction-to-case thermal resistance (top of package)(1) | 15 | °C/W | ||
| RθJB | Junction-to-board thermal resistance(2) | 1.5 | °C/W | ||
(1) RθJC is determined with the device mounted on a 1 inch² (6.45 cm²), 2 oz (0.071 mm thick) Cu pad on a 1.5 inches x 1.5 inches, 0.06 inch (1.52 mm) thick FR4 board.
(2) RθJB value based on hottest board temperature within 1 mm of the package.
