SLPS422B March   2013  – August 2016 CSD97376Q4M

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Application Diagram
      2.      Typical Power Stage Efficiency and Power Loss
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Functional Block Diagram
    2. 7.2 Powering CSD97376Q4M and Gate Drivers
    3. 7.3 Undervoltage Lockout Protection (UVLO)
    4. 7.4 PWM Pin
    5. 7.5 SKIP# Pin
      1. 7.5.1 Zero Crossing (ZX) Operation
    6. 7.6 Integrated Boost-Switch
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Power Loss Curves
    3. 8.3 Safe Operating Curves (SOA)
    4. 8.4 Normalized Curves
    5. 8.5 Calculating Power Loss and SOA
      1. 8.5.1 Design Example
      2. 8.5.2 Calculating Power Loss
      3. 8.5.3 Calculating SOA Adjustments
  9. 9 Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Recommended PCB Design Overview
      2. 9.1.2 Electrical Performance
      3. 9.1.3 Thermal Performance
    2. 9.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Community Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  11. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Package Dimensions
    2. 11.2 Recommended PCB Land Pattern
    3. 11.3 Recommended Stencil Opening

Package Options

Mechanical Data (Package|Pins)
  • DPC|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.1 Application Information

The power stage CSD97376Q4M is a highly optimized design for synchronous buck applications using NexFET devices with a 5-V gate drive. The control FET and sync FET silicon are parametrically tuned to yield the lowest power loss and highest system efficiency. As a result, a rating method is used that is tailored towards a more systems-centric environment. The high-performance gate driver IC integrated in the package helps minimize the parasitics and results in extremely fast switching of the power MOSFETs. System-level performance curves such as power loss, safe operating area and normalized graphs allow engineers to predict the product performance in the actual application.