SLPS542 January 2015 CSD97394Q4M
PRODUCTION DATA.
NOTE
Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.
The Power Stage CSD97394Q4M is a highly optimized design for synchronous buck applications using NexFET devices with a 5 V gate drive. The Control FET and Sync FET silicon are parametrically tuned to yield the lowest power loss and highest system efficiency. As a result, a rating method is used that is tailored towards a more systems centric environment. The high-performance gate driver IC integrated in the package helps minimize the parasitics and results in extremely fast switching of the power MOSFETs. System level performance curves such as Power Loss, Safe Operating Area and normalized graphs allow engineers to predict the product performance in the actual application.
VIN = 12 V | VDD = 5 V | VOUT = 1.8 V |
ƒSW = 500 kHz | LOUT = 0.29 µH |
VIN = 12 V | VDD = 5 V | VOUT = 1.8 V |
ƒSW = 500 kHz | LOUT = 0.29 µH |
VIN = 12 V | VDD = 5 V | VOUT = 1.8 V |
ƒSW = 500 kHz | LOUT = 0.29 µH |
IOUT = 20 A | VDD = 5 V | VOUT = 1.8 V |
ƒSW = 500 kHz | LOUT = 0.29 µH |
VIN = 12 V | VDD = 5 V | IOUT = 20 A |
ƒSW = 500 kHz | VOUT = 1.8 V |
VIN = 12 V | VDD = 5 V | VOUT = 1.8 V | ||
IOUT = 20 A | LOUT = 0.29 µH |
VIN = 12 V | VDD = 5 V | VOUT = 1.8 V |
ƒSW = 500 kHz | LOUT = 0.29 µH |
VIN = 12 V | VDD = 5 V | VOUT = 1.8 V |
ƒSW = 500 kHz | LOUT = 0.29 µH |
VIN = 12 V | VDD = 5 V | VOUT = 1.8 V |
IOUT = 20 A | LOUT = 0.29 µH |
VIN = 12 V | VDD = 5 V | IOUT = 20 A |
ƒSW = 500 kHz | LOUT = 0.29 µH |
VIN = 12 V | VDD = 5 V | IOUT = 20 A |
LOUT = 0.29 µH | VOUT = 1.8 V |