6 Specifications
6.1 Absolute Maximum Ratings(1)
TA = 25°C (unless otherwise noted)
|
MIN |
MAX |
UNIT |
|
VIN to PGND |
–0.3 |
30 |
V |
|
VSW to PGND , VIN to VSW |
–0.3 |
30 |
V |
|
VSW to PGND, VIN to VSW (<10 ns) |
–7 |
33 |
V |
|
VDD to PGND |
–0.3 |
6 |
V |
|
PWM, SKIP# to PGND |
–0.3 |
6 |
V |
|
BOOT to PGND |
–0.3 |
35 |
V |
|
BOOT to PGND (<10 ns) |
–2 |
38 |
V |
|
BOOT to BOOT_R |
–0.3 |
6 |
V |
|
BOOT to BOOT_R (duty cycle <0.2%) |
|
8 |
V |
PD |
Power dissipation |
|
8 |
W |
TJ |
Operating temperature range |
–40 |
150 |
°C |
Tstg |
Storage temperature range |
–55 |
150 |
°C |
(1) Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to Absolute Maximum rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
|
VALUE |
UNIT |
V(ESD) |
Electrostatic discharge |
Human Body Model (HBM)(1) |
±2000 |
V |
Charged Device Model (CDM)(2) |
±500 |
(1) JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
TA = 25° (unless otherwise noted)
|
MIN |
MAX |
UNIT |
VDD |
Gate drive voltage |
4.5 |
5.5 |
V |
VIN |
Input supply voltage(1) |
|
24 |
V |
IOUT |
Continuous output current |
VIN = 12 V, VDD = 5 V, VOUT = 1.8 V, ƒSW = 500 kHz, LOUT = 0.29 µH(2) |
|
20 |
A |
IOUT-PK |
Peak output current(3) |
|
45 |
A |
ƒSW |
Switching frequency |
CBST = 0.1 µF (min) |
|
2000 |
kHz |
|
On time duty cycle |
|
85% |
|
|
Minimum PWM on time |
40 |
|
ns |
|
Operating temperature |
–40 |
125 |
°C |
(1) Operating at high VIN can create excessive AC voltage overshoots on the switch node (VSW) during MOSFET switching transients. For reliable operation, the switch node (VSW) to ground voltage must remain at or below the Absolute Maximum Ratings.
(2) Measurement made with six 10 µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins.
(3) System conditions as defined in Note 2. Peak Output Current is applied for tp = 10 ms, duty cycle ≤ 1%
6.4 Thermal Information
TA = 25°C (unless otherwise noted)
THERMAL METRIC |
MIN |
TYP |
MAX |
UNIT |
RθJC |
Junction-to-case (top of package) thermal resistance(1) |
|
|
22.8 |
°C/W |
RθJB |
Junction-to-board thermal resistance(2) |
|
|
2.5 |
(1) RθJC is determined with the device mounted on a 1 inch² (6.45 cm²), 2 oz (0.071 mm thick) Cu pad on a 1.5 inch x 1.5 inch, 0.06 inch (1.52 mm) thick FR4 board.
(2) RθJB value based on hottest board temperature within 1mm of the package.