SLASF07 September   2023 DAC43901-Q1 , DAC43902-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: Comparator Mode
    6. 6.6  Electrical Characteristics: General
    7. 6.7  Timing Requirements: I2C Standard Mode
    8. 6.8  Timing Requirements: I2C Fast Mode
    9. 6.9  Timing Requirements: I2C Fast-Mode Plus
    10. 6.10 Timing Requirements: SPI Write Operation
    11. 6.11 Timing Requirements: SPI Read and Daisy Chain Operation (FSDO = 0)
    12. 6.12 Timing Requirements: SPI Read and Daisy Chain Operation (FSDO = 1)
    13. 6.13 Timing Requirements: PWM Output
    14. 6.14 Timing Diagrams
    15. 6.15 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Smart Digital-to-Analog Converter (DAC) Architecture
      2. 7.3.2 Threshold DAC
        1. 7.3.2.1 Voltage Reference and DAC Transfer Function
        2. 7.3.2.2 Power-Supply as Reference
        3. 7.3.2.3 Internal Reference
        4. 7.3.2.4 External Reference
      3. 7.3.3 Programming Interface
      4. 7.3.4 Nonvolatile Memory (NVM)
        1. 7.3.4.1 NVM Cyclic Redundancy Check (CRC)
          1. 7.3.4.1.1 NVM-CRC-FAIL-USER Bit
          2. 7.3.4.1.2 NVM-CRC-FAIL-INT Bit
      5. 7.3.5 Power-On Reset (POR)
      6. 7.3.6 External Reset
      7. 7.3.7 Register-Map Lock
    4. 7.4 Device Functional Modes
      1. 7.4.1 Comparator Mode
      2. 7.4.2 PWM Fade-In Fade-Out Mode
      3. 7.4.3 Sequential Turn-Indicator Animation Mode
    5. 7.5 Programming
      1. 7.5.1 SPI Programming Mode
      2. 7.5.2 I2C Programming Mode
        1. 7.5.2.1 F/S Mode Protocol
        2. 7.5.2.2 I2C Update Sequence
          1. 7.5.2.2.1 Address Byte
          2. 7.5.2.2.2 Command Byte
        3. 7.5.2.3 I2C Read Sequence
    6. 7.6 Register Maps
      1. 7.6.1  NOP Register (address = 00h) [reset = 0000h]
      2. 7.6.2  DAC-x-VOUT-CMP-CONFIG Register (address = 15h, 03h)
      3. 7.6.3  COMMON-CONFIG Register (address = 1Fh)
      4. 7.6.4  COMMON-TRIGGER Register (address = 20h) [reset = 0000h]
      5. 7.6.5  COMMON-PWM-TRIG Register (address = 21h) [reset = 0000h]
      6. 7.6.6  GENERAL-STATUS Register (address = 22h) [reset = 00h, DEVICE-ID, VERSION-ID]
      7. 7.6.7  INTERFACE-CONFIG Register (address = 26h) [reset = 0000h]
      8. 7.6.8  STATE-MACHINE-CONFIG0 Register (address = 27h) [reset = 0003h]
      9. 7.6.9  SRAM-CONFIG Register (address = 2Bh) [reset = 0000h]
      10. 7.6.10 SRAM-DATA Register (address = 2Ch) [reset = 0000h]
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Sequential Turn Indicator
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Logarithmic Fade-In Fade-Out
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.4 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.