SLASF73 April 2023 DAC63202W
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
INTERNAL REFERENCE | ||||||
Initial accuracy | TA = 25°C | 1.1979 | 1.212 | 1.224 | V | |
Reference output temperature coefficient(1) (2) | 50 | ppm/°C | ||||
EXTERNAL REFERENCE | ||||||
VREF input impedance(1) (3) | 192 | kΩ/ch | ||||
EEPROM | ||||||
Endurance(1) | –40°C ≤ TA ≤ +85°C | 20000 | Cycles | |||
TA = 125°C | 1000 | |||||
Data retention(1) | TA = 25°C | 50 | Years | |||
EEPROM programming write cycle time(1) | 200 | ms | ||||
Device boot-up time(1) | Time taken from power valid (VDD ≥ 1.7 V) to output valid state (output state as programmed in EEPROM), 0.5-µF capacitor on the CAP pin | 5 | ms | |||
DIGITAL INPUTS | ||||||
Digital feedthrough | Voltage output mode, DAC output static at midscale, fast mode plus, SCL toggling | 20 | nV-s | |||
IDD | Current flowing into VDD | DAC in sleep mode, internal reference powered down, external reference at 5.5 V | 28 | µA | ||
IDD | Current flowing into VDD(1) | DAC in sleep mode, internal reference enabled, additional current through internal reference | 10 | µA | ||
IDD | Current flowing into VDD(1) | DAC channels enabled, internal reference enabled, additional current through internal reference per DAC channel in voltage-output mode | 12.5 | µA | ||
Pin capacitance | Per pin | 10 | pF | |||
POWER-DOWN MODE | ||||||
HIGH-IMPEDANCE OUTPUT | ||||||
ILEAK | Current flowing into VOUTX and VFBX | DAC in Hi-Z output mode, 1.7 V ≤ VDD ≤ 5.5 V | 10 | nA | ||
VDD = 0 V, VOUT ≤ 1.5 V, decoupling capacitor between VDD and AGND = 0.1 μF | 200 | nA | ||||
VDD = 0 V, 1.5 V < VOUT ≤ 5.5 V, decoupling capacitor between VDD and AGND = 0.1 μF | 500 | nA | ||||
100 kΩ between VDD and AGND, VOUT ≤ 1.25 V, series resistance of 10 kΩ at OUT pin | ±2 | µA |