Over operating free-air temperature range (unless otherwise noted). The
functional performance of the device specified in this data sheet is achieved
when operating the device within the limits defined by this table. No level of
performance is implied when operating the device above or below these
limits. | MIN | NOM | MAX | UNIT |
---|
VOLTAGE SUPPLY |
VCC | LVCMOS logic supply voltage(1) | 1.65 | 1.8 | 1.95 | V |
VOFFSET | Mirror electrode and HVCMOS voltage(1)(2) | 9.5 | 10 | 10.5 | V |
VBIAS | Mirror electrode voltage(1) | 17.5 | 18 | 18.5 | V |
VRESET | Mirror electrode voltage(1) | –14.5 | –14 | –13.5 | V |
|VBIAS – VOFFSET| | Supply voltage difference (absolute value)(3) | | | 10.5 | V |
|VBIAS – VRESET| | Supply voltage difference (absolute value)(4) | | | 33 | V |
LVCMOS INTERFACE |
VIH(DC) | DC input high voltage(5) | 0.7 × VCC | | VCC + 0.3 | V |
VIL(DC) | DC input low voltage(5) | –0.3 | | 0.3 × VCC | V |
VIH(AC) | AC input high voltage(5) | 0.8 × VCC | | VCC + 0.3 | V |
VIL(AC) | AC input low voltage(5) | –0.3 | | 0.2 × VCC | V |
tPWRDNZ | PWRDNZ pulse duration(6) | 10 | | | ns |
SCP INTERFACE |
ƒSCPCLK | SCP clock frequency(7) | | | 500 | kHz |
tSCP_PD | Propagation delay, clock to Q, from rising-edge of
SCPCLK to valid SCPDO(8) | 0 | | 900 | ns |
tSCP_NEG_ENZ | Time between falling-edge of SCPENZ and the first
rising-edge of SCPCLK | 1 | | | µs |
tSCP_POS_ENZ | Time between falling-edge of SCPCLK and the
rising-edge of SCPENZ | 1 | | | µs |
tSCP_DS | SCPDI clock setup time (before SCPCLK falling
edge)(8) | 800 | | | ns |
tSCP_DH | SCPDI hold time (after SCPCLK falling edge)(8) | 900 | | | ns |
tSCP_PW_ENZ | SCPENZ inactive pulse duration (high level) | 2 | | | µs |
LVDS INTERFACE |
ƒCLOCK | Clock frequency for LVDS interface (all channels),
DCLK(9) | | | 400 | MHz |
|VID| | Input differential voltage (absolute value)(10) | 150 | 300 | 440 | mV |
VCM | Common mode voltage(10) | 1100 | 1200 | 1300 | mV |
VLVDS | LVDS voltage(10) | 880 | | 1520 | mV |
tLVDS_RSTZ | Time required for LVDS receivers to recover from
PWRDNZ | | | 2000 | ns |
ZIN | Internal differential termination resistance | 80 | 100 | 120 | Ω |
ZLINE | Line differential impedance (PWB/trace) | 90 | 100 | 110 | Ω |
ENVIRONMENTAL |
TARRAY | Array temperature, long–term operational(11)(12)(13)(14) | 10 | | 40 to 70(13) | °C |
Array temperature, short–term operational(12)(15) | 0 | | 10 | °C |
TWINDOW | Window temperature – operational(16) | | | 85 | °C |
|TDELTA| | Absolute temperature delta between any point on the
window edge and the ceramic test point TP1(16)(17) | | | 14 | °C |
TDP-AVG | Average dew point temperature
(non-condensing)(18) | | | 28 | °C |
TDP-ELR | Elevated dew point temperature range
(non-condensing)(19) | 28 | | 36 | °C |
CTELR | Cumulative time in elevated dew point temperature
range | | | 24 | Months |
ILLθ | Illumination marginal ray angle(20) | | | 55 | deg |
For
Illumination Source Between 420 nm and 700 nm |
ILLVIS | Illumination power density on array(21) | | | 31 | W/cm2 |
ILLVISTP | Illumination total
power on array | | | 22 | W |
For
Illumination Source <420 nm and >700 nm |
ILLIR | Illumination wavelengths > 700 nm | | | 10 | mW/cm2 |
ILLUV | Illumination wavelengths < 420 nm(11) | | | 10 | mW/cm2 |
(1) All voltages are referenced to common ground VSS. VBIAS, VCC, VOFFSET, and VRESET power supplies are all required for proper DMD operation. VSS must also be connected.
(2) VOFFSET supply transients must fall within specified max voltages.
(3) To prevent excess current, the supply voltage difference |V
BIAS –
V
OFFSET| must be less than the specified limit. See
Section 9,
Figure 9-1, and
Table 9-1.
(4) To prevent excess current, the supply voltage difference |V
BIAS –
V
RESET| must be less than the specified limit. See
Section 9,
Figure 9-1, and
Table 9-1.
(5) Low-speed interface is LPSDR and adheres to the Electrical Characteristics and AC/DC Operating Conditions table in JEDEC Standard No. 209B, “Low-Power Double Data Rate (LPDDR)” JESD209B. Tester conditions for V
IH and V
IL.
- Frequency = 60 MHz. Maximum rise time = 2.5 ns at 20/80
- Frequency = 60 MHz. Maximum fall time = 2.5 ns at 80/20
(6) PWRDNZ input pin resets the SCP and disables the LVDS receivers. PWRDNZ input pin overrides SCPENZ input pin and tristates the SCPDO output pin.
(7) The SCP clock is a gated clock. Duty cycle must be 50% ± 10%. SCP parameter is related to the frequency of DCLK.
(10) See LVDS waveform requirements in
Figure 6-5.
(11) Simultaneous exposure of the DMD to the maximum
Section 6.4
for temperature and UV illumination reduces device lifetime.
(12) The array temperature cannot be measured directly and must be computed
analytically from the temperature measured at test point 1 (TP1) shown in
Figure 7-2 and the
package thermal resistance
Section 7.6.
(13) Per
Figure 6-1, the maximum
operational array temperature must be derated based on the micromirror landed
duty cycle that the DMD experiences in the end application. See
Section 7.7
for a definition of micromirror landed duty cycle.
(14) Long-term is defined as the usable life of the device.
(15) Array temperatures beyond those specified as long-term are recommended for
short-term conditions only (power-up). Short-term is defined as the cumulative
time over the usable life of the device and is less than 500 hours.
(16) Temperature delta is the highest difference between the ceramic test point 1
(TP1) and anywhere on the window edge as shown in
Figure 7-2. The window test points TP2, TP3, TP4, and TP5 shown in
Figure 7-2 are intended to result in the worst case delta temperature. If a particular
application causes another location on the window edge to result in a larger delta
in temperature, use that location.
(17) DMD is qualified at the maximum temperature specified. Operation of the DMD
outside of these limits has not been tested.
(18) The
average
over time (including storage and operating) that the device is not in the
elevated dew point temperature range.
(19) Limit exposure to dew point temperatures in the elevated range during storage
and operation to less than a total cumulative time of CTELR.
(20) The maximum marginal ray angle of the incoming
illumination light at any point in the micromirror array, including the pond of
micromirrors (POM), cannot exceed 55 degrees from the normal to the device array
plane. The device window aperture has not necessarily been designed to allow
incoming light at higher maximum angles to pass to the micromirrors, and the
device performance has not been tested nor qualified at angles exceeding this.
Illumination light exceeding this angle outside the micromirror array (including
POM) contributes to thermal limitations described in this document, and may
negatively affect lifetime.
(21) The maximum optical power that can be incident on the DMD is limited by the
maximum optical power density and the micromirror array temperature.