DLPS186 Data sheet

DLPS186A March 2021 – May 2022 DLP650TE

PRODUCTION DATA

6.8 Timing Requirements

Over operating free-air temperature range and supply voltages (unless otherwise noted)

SYMBOL	PARAMETER	TEST CONDITIONS	MIN	MAX	UNIT
LVCMOS
t_r	Rise time ⁽¹⁾	20% to 80% reference points		25	ns
t_f	Fall time ⁽¹⁾	80% to 20% reference points		25	ns
Low Speed Interface (LSIF)
t_r	Rise time ⁽²⁾	20% to 80% reference points		450	ps
t_f	Fall time ⁽²⁾	80% to 20% reference points		450	ps
t_W(H)	Pulse duration high ⁽³⁾	LS_CLK. 50% to 50% reference points	3.1		ns
t_W(L)	Pulse duration low ⁽³⁾	LS_CLK. 50% to 50% reference points	3.1		ns
t_su	Setup time ⁽⁴⁾	LS_WDATA valid before rising edge of LS_CLK (differential)	1.5		ns
t_h	Hold time ⁽⁴⁾	LS_WDATA valid after rising edge of LS_CLK (differential)	1.5		ns
High Speed Serial Interface (HSSI)
t_r	Rise time(5), Data	from -A1 to A1 minimum eye height specification	50	115	ps
t_r	Rise time(5), Clock	from -A1 to A1 minimum eye height specification	50	135	ps
t_f	Fall time(5), Data	from A1 to -A1 minimum eye height specification	50	115	ps
t_f	Fall time(5), Clock	from A1 to -A1 minimum eye height specification	50	135	ps
t_W(H)	Pulse duration high ⁽⁶⁾	DCLK. 50% to 50% reference points	0.275		ns
t_W(L)	Pulse duration low ⁽⁶⁾	DCLK. 50% to 50% reference points	0.275		ns
t_c	Cycle time ⁽⁶⁾	DCLK	0.625	0.833	ns

(1) See Figure 6-9 and Figure 6-10 LVCMOS Rise, Fall Time SLew Rate Figures. Specification is for DMD_DEN_ARSTZ pin (LVCMOS).

(2) See Figure 6-6 for rise and fall time for LSIF.

(3) See Figure 6-5 for pulse duration high and low time for LSIF.

(4) See Figure 6-5 for setup and hold time for LSIF.

(5) See Figure 6-11 for rise and fall time for HSSI.

(6) See Figure 6-13 for pulse duration high and low and cycle time for HSSI.