DLPS163D April   2019  – December 2023 DLP660TE

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
    1. 4.1 Pin Functions—Test Pads
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  Storage Conditions
    3. 5.3  ESD Ratings
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Thermal Information
    6. 5.6  Electrical Characteristics
    7. 5.7  Capacitance at Recommended Operating Conditions
    8. 5.8  Timing Requirements
    9. 5.9  System Mounting Interface Loads
    10. 5.10 Micromirror Array Physical Characteristics
    11. 5.11 Micromirror Array Optical Characteristics
    12. 5.12 Window Characteristics
    13. 5.13 Chipset Component Usage Specification
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Power Interface
      2. 6.3.2 Timing
    4. 6.4 Device Functional Modes
    5. 6.5 Optical Interface and System Image Quality Considerations
      1. 6.5.1 Optical Interface and System Image Quality
        1. 6.5.1.1 Numerical Aperture and Stray Light Control
        2. 6.5.1.2 Pupil Match
        3. 6.5.1.3 Illumination Overfill
    6. 6.6 Micromirror Array Temperature Calculation
    7. 6.7 Micromirror Power Density Calculation
    8. 6.8 Micromirror Landed-On/Landed-Off Duty Cycle
      1. 6.8.1 Definition of Micromirror Landed-On/Landed-Off Duty Cycle
      2. 6.8.2 Landed Duty Cycle and Useful Life of the DMD
      3. 6.8.3 Landed Duty Cycle and Operational DMD Temperature
      4. 6.8.4 Estimating the Long-Term Average Landed Duty Cycle of a Product or Application
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 DMD Die Temperature Sensing
  9. 8 Power Supply Recommendations
    1. 8.1 DMD Power Supply Power-Up Procedure
    2. 8.2 DMD Power Supply Power-Down Procedure
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
      1. 9.2.1 Layers
      2. 9.2.2 Impedance Requirements
      3. 9.2.3 Trace Width, Spacing
        1. 9.2.3.1 Voltage Signals
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Device Support
      1. 10.2.1 Device Nomenclature
      2. 10.2.2 Device Markings
    3. 10.3 Documentation Support
      1. 10.3.1 Related Documentation
    4. 10.4 Receiving Notification of Documentation Updates
    5. 10.5 Support Resources
    6. 10.6 Trademarks
    7. 10.7 Electrostatic Discharge Caution
    8. 10.8 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.4 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted). The functional performance of the device specified in this data sheet is achieved when operating the device within the limits defined by recommended operating conditions . No level of performance is implied when operating the device above or below the limits.
MIN NOM MAX UNIT
Voltage Supply
VCC LVCMOS logic supply voltage(1) 1.65 1.8 1.95 V
VCCI LVCMOS LVDS Interface supply voltage(1) 1.65 1.8 1.95 V
VOFFSET Mirror electrode and HVCMOS voltage(1)(2) 9.5 10 10.5 V
VBIAS Mirror electrode voltage(1) 17.5 18 18.5 V
VRESET Mirror electrode voltage(1) –14.5 –14 –13.5 V
|VCC – VCCI| Supply voltage delta (absolute value)(3) 0 0.3 V
|VBIAS – VOFFSET| Supply voltage delta (absolute value)(4) 10.5 V
|VBIAS – VRESET| Supply voltage delta (absolute value)(5) 33 V
LVCMOS Interface
VIH(DC) DC input high voltage(6) 0.7 × VCC VCC + 0.3 V
VIL(DC) DC input low voltage(6) –0.3 0.3 × VCC V
VIH(AC) AC input high voltage(6) 0.8 × VCC VCC + 0.3 V
VIL(AC) AC input low voltage(6) –0.3 0.2 × VCC V
tPWRDNZ PWRDNZ pulse width(7) 10 ns
SCP Interface
ƒSCPCLK SCP clock frequency(8) 500 kHz
tSCP_PD Propagation delay, clock to Q, from rising edge of SCPCLK to valid SCPDO(9) 0 900 ns
tSCP_NEG_ENZ Time between the falling edge of SCPENZ and the first rising edge of SCPCLK 2 µs
tSCP_POS_ENZ Time between the falling edge of SCPCLK and the rising edge of SCPENZ 2 µs
tSCP_DS SCPDI clock setup time (before SCPCLK falling edge)(9) 800 ns
tSCP_DH SCPDI hold time (after SCPCLK falling edge)(9) 900 ns
tSCP_PW_ENZ SCPENZ inactive pulse width (high level) 2 µs
LVDS Interface
ƒCLOCK Clock frequency for LVDS interface (all channels), DCLK(10) 400 MHz
|VID| Input differential voltage (absolute value)(11) 150 300 440 mV
VCM Common mode voltage(11) 1100 1200 1300 mV
VLVDS LVDS voltage(11) 880 1520 mV
tLVDS_RSTZ Time required for LVDS receivers to recover from PWRDNZ 2000 ns
ZIN Internal differential termination resistance 80 100 120 Ω
ZLINE Line differential impedance (PWB/trace) 90 100 110 Ω
ENVIRONMENTAL
TARRAY Array temperature, long-term operational(12)(13)(14)(15)(22) 10 40 to 70 °C
Array temperature, short-term operational, 500-hr max(13)(16) 0 10 °C
TWINDOW Window temperature – operational(17) 85 °C
|TDELTA| Absolute temperature delta between any point on the window edge and the ceramic test point TP1(18) 14 °C
TDP -AVG Average dew point temperature (non-condensing)(19) 28 °C
TDP-ELR Elevated dew point temperature range (non-condensing)(20) 28 36 °C
CTELR Cumulative time in elevated dew point temperature range 24 Months
ILLθ Illumination marginal ray angle(21)

55

 °
SOLID STATE ILLUMINATION
ILLUV Illumination power < 410 nm(12)(23)

10

 mW/cm2
ILLVIS Illumination power ≥ 410 nm and ≤ 800 nm(22)(23) 22 W/cm2
ILLIR Illumination power > 800 nm(23)

10

 mW/cm2
ILLBLU Illumination power ≥ 410 nm and ≤ 475 nm(22)(23)

7

 W/cm2
ILLBLU1 Illumination power ≥ 410 nm and ≤ 440 nm(22)(23)

1.1

 W/cm2
LAMP ILLUMINATION
ILLUV Illumination power < 395 nm(12)(23)

2

 mW/cm2
ILLVIS Illumination power ≥ 395 nm and ≤ 800 nm(22)(23) 18 W/cm2
ILLIR Illumination power > 800 nm(23)

10

 mW/cm2
(1) All voltages are referenced to common ground VSS. VBIAS, VCC, VCCI, VOFFSET, and VRESET power supplies are all required for proper DMD operation. VSS must also be connected.
(2) VOFFSET supply transients must fall within specified max voltages.
(3) To prevent excess current, the supply voltage delta |VCCI – VCC| must be less than specified limit. See Section 8, Figure 8-1, and Table 8-1.
(4) To prevent excess current, the supply voltage delta |VBIAS – VOFFSET| must be less than specified limit. See Section 8, Figure 8-1, and Table 8-1.
(5) To prevent excess current, the supply voltage delta |VBIAS – VRESET| must be less than specified limit. See Section 8, Figure 8-1, and Table 8-1.
(6) Low-speed interface is LPSDR and adheres to the Electrical Characteristics and AC/DC Operating Conditions table in JEDEC Standard No. 209B, “Low-Power Double Data Rate (LPDDR)” JESD209B.Tester Conditions for VIH and VIL.
  • Frequency = 60 MHz. Maximum Rise Time = 2.5 ns @ (20% – 80%)
  • Frequency = 60 MHz. Maximum Fall Time = 2.5 ns @ (80% – 20%)
(7) PWRDNZ input pin resets the SCP and disables the LVDS receivers. PWRDNZ input pin overrides SCPENZ input pin and tristates the SCPDO output pin.
(8) The SCP clock is a gated clock. Duty cycle must be 50% ± 10%. SCP parameter is related to the frequency of DCLK.
(9) See Figure 5-2.
(10) See LVDS Timing Requirements in Section 5.8 and Figure 5-6.
(11) See Figure 5-5 LVDS Waveform Requirements.
(12) Simultaneous exposure of the DMD to the maximum Section 5.4 for temperature and UV illumination reduces device lifetime.
(13) The array temperature cannot be measured directly and must be computed analytically from the temperature measured at test point (TP1) shown in Figure 6-1 and the package thermal resistance using the calculation in Section 6.6.
(14) Per Figure 5-1, the maximum operational array temperature should be derated based on the micromirror landed duty cycle that the DMD experiences in the end application. Refer to Section 6.8 for a definition of micromirror landed duty cycle.
(15) Long-term is defined as the usable life of the device.
(16) Short-term is the total cumulative time over the useful life of the device.
(17) The locations of thermal test points TP2, TP3, TP4, and TP5 shown in Figure 6-1 are intended to measure the highest window edge temperature. For most applications, the locations shown are representative of the highest window edge temperature. If a particular application causes additional points on the window edge to be at a higher temperature, test points should be added to those locations.
(18) Temperature delta is the highest difference between the ceramic test point 1 (TP1) and anywhere on the window edge as shown in Figure 6-1. The window test points TP2, TP3, TP4, and TP5 shown in Figure 6-1 are intended to result in the worst case delta temperature. If a particular application causes another point on the window edge to result in a larger delta in temperature, that point should be used.
(19) The average over time (including storage and operating) that the device is not in the ‘elevated dew point temperature range'.
(20) Exposure to dew point temperatures in the elevated range during storage and operation should be limited to less than a total cumulative time of CTELR.
(21) The maximum marginal ray angle of the incoming illumination light at any point in the micromirror array, including pond of micromirrors (POM), should not exceed 55 degrees from the normal to the device array plane. The device window aperture has not necessarily been designed to allow incoming light at higher maximum angles to pass to the micromirrors, and the device performance has not been tested nor qualified at angles exceeding this. Illumination light exceeding this angle outside the micromirror array (including POM) will contribute to thermal limitations described in this document and may negatively affect lifetime.
(22) The maximum allowable optical power incident on the DMD is limited by the maximum optical power density for each wavelength range specified and the micromirror array temperature (TARRAY).
(23) To calculate, see the Micromirror Power Density Calculation.
GUID-E47D1640-BD02-4BCD-9A42-A9E55B3E6BBF-low.gif Figure 5-1 Max Recommended Array Temperature—Derating Curve