DLPS071A October 2015 – February 2023 DLPA3005
PRODUCTION DATA
The selection of the FET relative to its drain-source on-resistance, RDS(ON), has two aspects. First, for the high-side FET of the illumination buck-converter, the RDS(ON) is a factor in the overcurrent detection. Second, for the other four FETs, the power dissipation drives the choice of the FETs RDS(ON).
To detect an overcurrent situation, the DLPA3005 measures the drain-source voltage drop of the high-side FET when turned on. The overcurrent detection circuit triggers, and switches off the high-side FET, when the threshold VDC-Th = 185 mV (typical) is reached. Therefore, the actual current, IOC, at which this overcurrent detection triggers, is given by:
Note that the RDS(ON) should be taken from the FET data sheet at high-temperature , that is, at overcurrent the FETs will likely by hot.
For example, the CSD17510Q5A NexFET has an RDS(ON) of 7 mΩ at 125°C. Using this FET will result in an overcurrent level of 26 A. This FET would be a good choice for a 16 A application.
For the low-side FET and the three LED selection FETs the RDS(ON) selection is mainly governed by the power dissipation due to conduction losses. The power dissipated in these FETs is given by:
In which IDS is the current running through the respective FET. The lower the RDS(ON), the lower is the dissipation.
For example, the CSD17501Q5A has RDS(ON)= 3 mΩ. For a drain-source current of 16 A with a duty cycle of 25% (assuming the FET is used as LED selection switch), the dissipation is about 0.2 W in this FET.