DLPS240A June 2024 – August 2024 DLPA3085
PRODUCTION DATA
Selecting the FET relative to its drain-source on-resistance, RDS(ON) has two aspects. First, for the high-side FET of the illumination buck-converter, the RDS(ON) is a factor in the overcurrent detection. Second, for the other four FETs, the power dissipation drives the choice of the FETs RDS(ON).
To detect an overcurrent situation, the DLPA3085 measures the drain-source voltage drop of the high-side FET when turned on. The overcurrent detection circuit triggers and switches off the high-side FET when the threshold VDC-Th = 185mV (typical) is reached. Therefore, the actual current, IOC, at which this overcurrent detection triggers is given by:
For example, the CSD17510Q5A NexFET has an RDS(ON) of 7mΩ at 125 °C. Using this FET results in an overcurrent level of 26A. This FET would be a good choice for a 16A application.
For the low-side FET and the three LED selection FETs, the RDS(ON) selection is mainly governed by the power dissipation due to conduction losses. The power dissipated in these FETs is given by:
IDS is the current running through the respective FET. The lower the RDS(ON), the lower the dissipation. For example, the CSD17501Q5A has RDS(ON)= 3mΩ. For a drain-source current of 16A with a duty cycle of 25% (assuming the FET is used as LED selection switch), the dissipation is about 0.2W in this FET.