DLPS048C March 2015 – June 2019 DLPC150
PRODUCTION DATA.
I/O TYPE | SUPPLY REFERENCE | ESD STRUCTURE | |
---|---|---|---|
SUBSCRIPT | DESCRIPTION | ||
1 | 1.8 LVCMOS I/O buffer with 8-mA drive | Vcc18 | ESD diode to GND and supply rail |
2 | 1.8 LVCMOS I/O buffer with 4-mA drive | Vcc18 | ESD diode to GND and supply rail |
3 | 1.8 LVCMOS I/O buffer with 24-mA drive | Vcc18 | ESD diode to GND and supply rail |
4 | 1.8 sub-LVDS output with 4-mA drive | Vcc18 | ESD diode to GND and supply rail |
5 | 1.8, 2.5, 3.3 LVCMOS with 4-mA drive | Vcc_INTF | ESD diode to GND and supply rail |
6 | 1.8 LVCMOS input | Vcc18 | ESD diode to GND and supply rail |
7 | 1.8-, 2.5-, 3.3-V I2C with 3-mA drive | Vcc_INTF | ESD diode to GND and supply rail |
8 | 1.8-V I2C with 3-mA drive | Vcc18 | ESD diode to GND and supply rail |
9 | 1.8-, 2.5-, 3.3-V LVCMOS with 8-mA drive | Vcc_INTF | ESD diode to GND and supply rail |
11 | 1.8, 2.5, 3.3 LVCMOS input | Vcc_INTF | ESD diode to GND and supply rail |
12 | 1.8-, 2.5-, 3.3-V LVCMOS input | Vcc_FLSH | ESD diode to GND and supply rail |
13 | 1.8-, 2.5-, 3.3-V LVCMOS with 8-mA drive | Vcc_FLSH | ESD diode to GND and supply rail |
INTERNAL PULLUP AND PULLDOWN
RESISTOR CHARACTERISTICS |
VCCIO | MIN | MAX | UNIT |
---|---|---|---|---|
Weak pullup resistance | 3.3 V | 29 | 63 | kΩ |
2.5 V | 38 | 90 | kΩ | |
1.8 V | 56 | 148 | kΩ | |
Weak pulldown resistance | 3.3 V | 30 | 72 | kΩ |
2.5 V | 36 | 101 | kΩ | |
1.8 V | 52 | 167 | kΩ |