DLPS014F April   2010  – May 2018 DLPC200

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
    2.     Power and Ground Pins
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  Handling Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  I/O Electrical Characteristics
    6. 6.6  Video Input Pixel Interface Timing Requirements
    7. 6.7  I2C Interface Timing Requirements
    8. 6.8  USB Read Interface Timing Requirements
    9. 6.9  USB Write Interface Timing Requirements
    10. 6.10 SPI Slave Interface Timing Requirements
    11. 6.11 Parallel Flash Interface Timing Requirements
    12. 6.12 Serial Flash Interface Timing Requirements
    13. 6.13 Static RAM Interface Timing Requirements
    14. 6.14 DMD Interface Timing Requirements
    15. 6.15 DLPA200 Interface Timing Requirements
    16. 6.16 DDR2 SDR Memory Interface Timing Requirements
    17. 6.17 Video Input Pixel Interface – Image Sync and Blanking Requirements
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Frame Rates
    4. 7.4 Device Functional Modes
      1. 7.4.1 Video Modes
      2. 7.4.2 Structured Light Modes
        1. 7.4.2.1 Static Image Buffer Mode
        2. 7.4.2.2 Real Time Structured Light Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 DLPC200 System Interfaces
          1. 8.2.2.1.1  DLPC200 Master, I2C Interface for EDID Programming
          2. 8.2.2.1.2  USB Interface
          3. 8.2.2.1.3  Bus Protocol
          4. 8.2.2.1.4  SPI Slave Interface
          5. 8.2.2.1.5  Parallel Flash Memory Interface
          6. 8.2.2.1.6  Serial Flash Memory Interface
          7. 8.2.2.1.7  SRAM Interface
          8. 8.2.2.1.8  DDR2 SDR Memory Interface
          9. 8.2.2.1.9  Projector Image and Control Port Signals
          10. 8.2.2.1.10 SDRAM Memory
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
    1. 9.1 Power-Up Requirements
    2. 9.2 Power-Down Requirements
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Impedance Requirements
      2. 10.1.2 PCB Signal Routing
      3. 10.1.3 Fiducials
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
      1. 10.3.1 Heat Sink
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 Device Marking
    2. 11.2 Documentation Support
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.2.1.8 DDR2 SDR Memory Interface

The DDR2 SDRAM is a high-speed CMOS, static dynamic random-access memory. It is internally configured as a multibank DRAM. The controller DDR-2 memory interface consists of four 32-Mb by 16-bit wide, DDR2 interfaces with double-data-rate signaling, operating at 133.33 MHz (nominal). A bidirectional data strobe (DQS, DQS) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM during READ commands and by the memory controller during WRITE commands. DQS is edge-aligned with data for READ commands and center-aligned with data for WRITE commands.

The DDR2 SDRAM operates from a differential clock (CK and CK); the crossing of CK going high and CK going low is referred to as the positive edge of CK. Commands (address and control signals) are registered at every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS as well as to both edges of CK. Read and write accesses to the DDR2 SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence.

Accesses begin with the registration of an ACTIVATE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVATE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE command are used to select the bank and the starting column location for the burst access.