DLPS030E December   2013  – March 2019 DLPC2607

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Typical Current and Power Dissipation
    6. 6.6  I/O Characteristics
    7. 6.7  Internal Pullup and Pulldown Characteristics
    8. 6.8  Parallel I/F Frame Timing Requirements
    9. 6.9  Parallel I/F General Timing Requirements
    10. 6.10 Parallel I/F Maximum Parallel Interface Horizontal Line Rate
    11. 6.11 BT.656 I/F General Timing Requirements
    12. 6.12 100- to 120-Hz Operational Limitations
    13. 6.13 Flash Interface Timing Requirements
    14. 6.14 DMD Interface Timing Requirements
    15. 6.15 mDDR Memory Interface Timing Requirements
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Parallel Bus Interface
      2. 7.3.2 100- to 120-Hz 3-D Display Operation
    4. 7.4 Programming
      1. 7.4.1 Serial Flash Interface
      2. 7.4.2 Serial Flash Programming
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 System Functional Modes
      2. 8.2.2 Design Requirements
        1. 8.2.2.1 Reference Clock
        2. 8.2.2.2 mDDR DRAM Compatibility
      3. 8.2.3 Detailed Design Procedure
        1. 8.2.3.1 Hot-Plug Usage
        2. 8.2.3.2 Maximum Signal Transition Time
        3. 8.2.3.3 Configuration Control
        4. 8.2.3.4 White Point Correction Light Sensor
      4. 8.2.4 Application Curve
  9. 9 Power Supply Recommendations
    1. 9.1 System Power Considerations
    2. 9.2 System Power-Up and Power-Down Sequence
    3. 9.3 System Power I/O State Considerations
    4. 9.4 Power-Up Initialization Sequence
    5. 9.5 Power-Good (PARK) Support
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1  Internal ASIC PLL Power
      2. 10.1.2  General Handling Guidelines for Unused CMOS-Type Pins
      3. 10.1.3  SPI Signal Routing
      4. 10.1.4  mDDR Memory and DMD Interface Considerations
      5. 10.1.5  PCB Design
      6. 10.1.6  General PCB Routing (Applies to All Corresponding PCB Signals)
      7. 10.1.7  Maximum, Pin-to-Pin, PCB Interconnects Etch Lengths
      8. 10.1.8  I/F Specific PCB Routing
      9. 10.1.9  Number of Layer Changes
      10. 10.1.10 Stubs
      11. 10.1.11 Termination Requirements:
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 Device Nomenclature
        1. 11.1.2.1 Device Marking
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Package Option Addendum
      1. 12.1.1 Packaging Information

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • ZVB|176
Thermal pad, mechanical data (Package|Pins)

9.3 System Power I/O State Considerations

Note that:

  • If VCC18 I/O power is applied when VDD10 core power is not applied, then all mDDR (non-fail-safe) and non-mDDR (fail-safe) output signals associated with the VCC18 supply are in a high-impedance state.
  • If VCC_INTF or VCC_FLSH I/O power is applied when VDD10 core power is not applied, then all output signals associated with these inactive I/O supplies are in a high-impedance state.
  • If VDD10 core power is applied but VCC_INTF or VCC_FLSH I/O power is not applied, then all output signals associated with these inactive I/O supplies are in a high-impedance state.
  • If VDD10 core power is applied but VCC18 I/O power is not applied, then all mDDR (non-fail-safe) and non-mDDR (fail-safe) output signals associated with the VCC18 I/O supply are in a high-impedance state. However, if driven high externally, only the non-mDDR (fail-safe) output signals remain in a high-impedance state, and the mDDR (non fail-safe) signals are shorted to ground through clamping diodes.