DLPS030E December   2013  – March 2019 DLPC2607

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Typical Current and Power Dissipation
    6. 6.6  I/O Characteristics
    7. 6.7  Internal Pullup and Pulldown Characteristics
    8. 6.8  Parallel I/F Frame Timing Requirements
    9. 6.9  Parallel I/F General Timing Requirements
    10. 6.10 Parallel I/F Maximum Parallel Interface Horizontal Line Rate
    11. 6.11 BT.656 I/F General Timing Requirements
    12. 6.12 100- to 120-Hz Operational Limitations
    13. 6.13 Flash Interface Timing Requirements
    14. 6.14 DMD Interface Timing Requirements
    15. 6.15 mDDR Memory Interface Timing Requirements
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Parallel Bus Interface
      2. 7.3.2 100- to 120-Hz 3-D Display Operation
    4. 7.4 Programming
      1. 7.4.1 Serial Flash Interface
      2. 7.4.2 Serial Flash Programming
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 System Functional Modes
      2. 8.2.2 Design Requirements
        1. 8.2.2.1 Reference Clock
        2. 8.2.2.2 mDDR DRAM Compatibility
      3. 8.2.3 Detailed Design Procedure
        1. 8.2.3.1 Hot-Plug Usage
        2. 8.2.3.2 Maximum Signal Transition Time
        3. 8.2.3.3 Configuration Control
        4. 8.2.3.4 White Point Correction Light Sensor
      4. 8.2.4 Application Curve
  9. 9 Power Supply Recommendations
    1. 9.1 System Power Considerations
    2. 9.2 System Power-Up and Power-Down Sequence
    3. 9.3 System Power I/O State Considerations
    4. 9.4 Power-Up Initialization Sequence
    5. 9.5 Power-Good (PARK) Support
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1  Internal ASIC PLL Power
      2. 10.1.2  General Handling Guidelines for Unused CMOS-Type Pins
      3. 10.1.3  SPI Signal Routing
      4. 10.1.4  mDDR Memory and DMD Interface Considerations
      5. 10.1.5  PCB Design
      6. 10.1.6  General PCB Routing (Applies to All Corresponding PCB Signals)
      7. 10.1.7  Maximum, Pin-to-Pin, PCB Interconnects Etch Lengths
      8. 10.1.8  I/F Specific PCB Routing
      9. 10.1.9  Number of Layer Changes
      10. 10.1.10 Stubs
      11. 10.1.11 Termination Requirements:
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 Device Nomenclature
        1. 11.1.2.1 Device Marking
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Package Option Addendum
      1. 12.1.1 Packaging Information

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • ZVB|176
Thermal pad, mechanical data (Package|Pins)

10.1.11 Termination Requirements:

DMD I/F Terminate all DMD I/F signals, with the exception of DMD_OEZ (specifically DMD_D(14:0), DMD_DCLK, DMD_TRC, DMD_SCTRL, DMD_LOADB, DMD_DAD_STRB, DMD_DAD_BUS, DMD_SAC_CLK, and DMD_SAC_BUS), at the source with a 10- to 30-Ω series resistor. TI recommends a 30-Ω series resistor for most applications because this minimizes overshoot, undershoot, and reduces EMI; however, for systems that must operate below –20°C, it may be necessary to reduce this series resistance to avoid narrowing the data eye too much under worse-case PVT conditions. TI recommends IBIS simulations for this worse-case scenario.
mDDR memory I/F
mDDR differential clock Terminate each line, specifically MEM0_CK(P:N), at the source with a 30-Ω series resistor. Terminate the pair with an external 100-Ω differential termination across the two signals as close to the DRAM as possible. (It may be possible to use a 200-Ω differential termination at the DRAM to save power while still providing sufficient signal integrity, but this has not been validated.)
mDDR data, strobe, and mask Terminate MEM0_DQ(15:0), MEM0_LDM, MEM0_UDM, MEM0_LDQS, and MEM0_UDQS with a 30-Ω series resistor located midway between the two devices.
mDDR address and control Terminate MEM0_A(12:0), MEM0_BA(1:0), MEM0_CKE, MEM0_CSZ, MEM0_RASZ, MEM0_CASZ, and MEM0_WEZ at the source with a 30-Ω series resistor.

For applications where the routed distance of the mDDR or DMD signal can be maintained to a length of less than 0.75 inches, this signal is short enough not be considered a transmission line and does not need a series terminating resistor.