SPRS950F December 2015 – May 2019 DRA745 , DRA746 , DRA750 , DRA756
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
Table 5-17 summarizes the DC electrical characteristics for BC1833IHHV Buffers.
PARAMETER | MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|---|
Signal Names in MUXMODE 0: on_off; | ||||||
Balls: Y11; | ||||||
1.8-V Mode | ||||||
VOH | Output high-level threshold (IOH = 2 mA) | VDDS-0.45 | V | |||
VOL | Output low-level threshold (IOL = 2 mA) | 0.45 | V | |||
IDRIVE | Pin Drive strength at PAD Voltage = 0.45V or VDDS-0.45V | 6 | mA | |||
IIN | Input current at each I/O pin | 6 | 12 | µA | ||
IOZ | IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ | 6 | µA | |||
CPAD | Pad capacitance (including package capacitance) | 4 | pF | |||
3.3-V Mode | ||||||
VOH | Output high-level threshold (IOH =100µA) | VDDS-0.2 | V | |||
VOL | Output low-level threshold (IOL = 100µA) | 0.2 | V | |||
IDRIVE | Pin Drive strength at PAD Voltage = 0.45V or VDDS-0.45V | 6 | mA | |||
IIN | Input current at each I/O pin | 60 | µA | |||
IOZ | IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ | 60 | µA | |||
CPAD | Pad capacitance (including package capacitance) | 4 | pF |