SPRS950F December 2015 – May 2019 DRA745 , DRA746 , DRA750 , DRA756
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
Table 5-10 summarizes the DC electrical characteristics for LVCMOS DDR Buffers.
NOTE
For more information on the I/O cell configurations (i[2:0], sr[1:0]), see the Chapter Control Module of the Device TRM.
PARAMETER | MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|---|
Signal Names in MUXMODE 0 (Single-Ended Signals): ddr1_d[31:0], ddr1_a[15:0], ddr1_dqm[3:0], ddr1_ba[2:0], ddr1_csn[0], ddr1_cke, ddr1_odt[0], ddr1_casn, ddr1_rasn, ddr1_wen, ddr1_rst, ddr1_ecc_d[7:0], ddr1_dqm_ecc, ddr2_d[31:0], ddr2_a[15:0], ddr2_dqm[3:0], ddr2_ba[2:0], ddr2_csn[0], ddr2_cke, ddr2_odt[0], ddr2_casn, ddr2_rasn, ddr2_wen, ddr2_rst; | ||||||
Balls: AA28 / AA25 / AA26 / Y24 / AA24 / Y23 / Y22 / AA23 / Y20 / AB27 / Y19 / AC27 / AC28 / AB28 / W20 / V20 / AD25 / AC24 / AC25 / AE26 / AF28 / AG27 / AF27 / AC23 / AE23 / AF23 / AE24 / AF24 / AH26 / AG26 / AF26 / AF25 / AD18 / AE17 / AF18 / AC21 / AD22 / AD21 / AE22 / AF22 / AE21 / AE21 / AH22 / AF21 / AB19 / AC20 / AC19 / AD20 / AA27 / AC26 / AB23 / AD23 / AB18 / AE18 / AF17 / AH23 / AG22 / AE20 / AC18 / AF20 / AH21 / AG21 / Y26 / V25 / V24 / Y25 / W23 / W19 / V23 / W22 / V26 / M26 / M25 / M24 / M23 / L28 / L25 / L26 / L27 / J20 / K22 / J23 / L24 / L23 / K21 / K20 / L22 / J24 / J26 / J25 / G26 / H26 / H24 / H25 / H23 / E28 / E27 / F27 / F26 / F24 / F25 / G25 / E26 / U22 / R22 / T22 / N28 / P26 / N23 / N27 / P27 / N20 / P25 / P22 / P23 / R27 / R28 / R26 / R25 / M22 / K23 / G24 / F28 / U26 / U27 / U23 / P24 / U24 / R23 / U28 / T23 / U25 / R24; | ||||||
Driver Mode | ||||||
VOH | High-level output threshold (IOH = 0.1 mA) | 0.9*VDDS | V | |||
VOL | Low-level output threshold (IOL = 0.1 mA) | 0.1*VDDS | V | |||
CPAD | Pad capacitance (including package capacitance) | 3 | pF | |||
ZO | Output impedance (drive strength) | l[2:0] = 000 (Imp80) | 80 | Ω | ||
l[2:0] = 001 (Imp60) | 60 | |||||
l[2:0] = 010 (Imp48) | 48 | |||||
l[2:0] = 011 (Imp40) | 40 | |||||
l[2:0] = 100 (Imp34) | 34 | |||||
Single-Ended Receiver Mode | ||||||
VIH | High-level input threshold | DDR3/DDR3L | VREF+0.1 | VDDS+0.2 | V | |
DDR2 | VREF+0.125 | VDDS+0.3 | ||||
VIL | Low-level input threshold | DDR3/DDR3L | -0.2 | VREF-0.1 | V | |
DDR2 | -0.3 | VREF-0.125 | ||||
VCM | Input common-mode voltage | VREF -10%vdds | VREF+ 10%vdds | V | ||
CPAD | Pad capacitance (including package capacitance) | 3 | pF | |||
Signal Names in MUXMODE 0 (Differential Signals): ddr1_dqs[3:0], ddr1_dqsn[3:0], ddr1_ck, ddr1_nck, ddr2_dqs[3:0], ddr2_dqsn[3:0], ddr2_ck, ddr2_nck, ddr1_dqs_ecc, ddr1_dqsn_ecc | ||||||
Bottom Balls: Y28 / AD27 / AE27 / AH25 / Y27 / AD28 / AE28 / AG25 / AG24 / AH24 / M28 / K27 / H27 / G28 / M27 / K28 / H28 / G27 / T28 / T27 / V27 / V28 | ||||||
Driver Mode | ||||||
VOH | High-level output threshold (IOH = 0.1 mA) | 0.9*VDDS | V | |||
VOL | Low-level output threshold (IOL = 0.1 mA) | 0.1*VDDS | V | |||
CPAD | Pad capacitance (including package capacitance) | 3 | pF | |||
ZO | Output impedance (drive strength) | l[2:0] = 000 (Imp80) | 80 | Ω | ||
l[2:0] = 001 (Imp60) | 60 | |||||
l[2:0] = 010 (Imp48) | 48 | |||||
l[2:0] = 011 (Imp40) | 40 | |||||
l[2:0] = 100 (Imp34) | 34 | |||||
Single-Ended Receiver Mode | ||||||
VIH | High-level input threshold | DDR3/DDR3L | VREF+0.1 | VDDS+0.2 | V | |
DDR2 | VREF+0.125 | VDDS+0.3 | ||||
VIL | Low-level input threshold | DDR3/DDR3L | -0.2 | VREF-0.1 | V | |
DDR2 | -0.3 | VREF-0.125 | ||||
VCM | Input common-mode voltage | VREF -10%vdds | VREF+ 10%vdds | V | ||
CPAD | Pad capacitance (including package capacitance) | 3 | pF | |||
Differential Receiver Mode | ||||||
VSWING | Input voltage swing | DDR3/DDR3L | 0.2 | vdds+0.4 | V | |
DDR2 | 0.25 | vdds+0.6 | ||||
VCM | Input common-mode voltage | VREF -10%vdds | VREF+ 10%vdds | |||
CPAD | Pad capacitance (including package capacitance) | 3 | pF |